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quality SOT363 Package Nexperia PUMH11-QX NPN Resistor Equipped Transistor for Automotive Peripheral Driving factory
quality SOT363 Package Nexperia PUMH11-QX NPN Resistor Equipped Transistor for Automotive Peripheral Driving factory

SOT363 Package Nexperia PUMH11-QX NPN Resistor Equipped Transistor for Automotive Peripheral Driving

Key Attributes
Model Number: PUMH11-QX
Product Custom Attributes
Emitter-Base Voltage(Vebo):
10V
Pd - Power Dissipation:
300mW
DC Current Gain:
30@5mA,5V
Resistor Ratio:
1
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PUMH11-QX
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMH11-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. Qualified according to AEC-Q101, it is recommended for automotive applications, including low current peripheral driving, control of IC inputs, and as a replacement for general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/NPN Resistor-Equipped Transistor (RET)
  • Package Type: SOT363 (SC-88)
  • Certifications: AEC-Q101 Qualified
  • Application Suitability: Automotive Applications

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 40 V
VI Input voltage negative - - -10 V
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA 2.5 1.8 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz
Per device
Ptot Total power dissipation Tamb = 25 C [1] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - - 417 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor


2411121145_Nexperia-PUMH11-QX_C7509039.pdf

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