power switching device Minos IRF840 with low reverse transfer capacitance and high breakdown voltage
Key Attributes
Model Number:
IRF840
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
RDS(on):
730mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
1.57nF
Pd - Power Dissipation:
134W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
IRF840
Package:
TO-220
Product Description
Product Overview
The IRF840 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key features include a high breakdown voltage (VDS=500V), continuous drain current (ID=8A), low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: mns-kx (Shenzhen Minos)
- Origin: China (Shenzhen)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| VDSS | Drain-to-Source Breakdown Voltage | 500 | V | ||
| ID | Drain Current (continuous) @ Tc=25 | 8 | A | ||
| IDM | Drain Current (pulsed) | 32 | A | ||
| VGS | Gate to Source Voltage | +/-30 | V | ||
| PD | Total Power Dissipation @ Tc=25 | 134 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | |||
| EAS | Single Pulse Avalanche Energy | 320 | mJ | ||
| Electrical Parameters | |||||
| VDS | Drain-source Voltage (VGS =0V, ID=250A) | 500 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance (VGS =10V, ID=6.5A) | 0.73 | 0.9 | ||
| VGS(th) | Gated Threshold Voltage (VDS=VGS, ID=250A) | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain to Source leakage Current (VDS=500V, VGS= 0V) | 10 | A | ||
| IGSS(F) | Gated Body Foward Leakage (VGS= +30V) | 0.1 | nA | ||
| IGSS(R) | Gated Body Reverse Leakage (VGS = -30V) | -0.1 | nA | ||
| Ciss | Input Capacitance (VGS =0V, VDS=25V, f=1.0MHZ) | 1570 | 2040 | pF | |
| Coss | Output Capacitance | 150 | 195 | pF | |
| Crss | Reverse Transfer Capacitance | 15 | 20 | pF | |
| Switching Characteristics | |||||
| td(on) | Turn-on Delay Time (VDD=250V,ID=8A, RG=10) | 25 | 60 | nS | |
| tr | Turn-on Rise Time | 75 | 160 | nS | |
| td(off) | Turn-off Delay Time | 125 | 260 | nS | |
| tf | Turn-off Fall Time | 75 | 160 | nS | |
| Qg | Total Gate Charge (VDS=400V ID=8A VGS=10V) | 25 | nC | ||
| Qgs | Gate-Source Charge | 8 | nC | ||
| Qgd | Gate-Drain Charge | 7 | nC | ||
| Source-Drain Diode Characteristics | |||||
| ISD | S-D Current(Body Diode) | 8 | A | ||
| ISDM | Pulsed S-D Current(Body Diode) | 32 | A | ||
| VSD | Diode Forward Voltage (VGS =0V, IDS=8A) | 1.5 | V | ||
| trr | Reverse Recovery Time (TJ=25,IF=8A di/dt=100A/us) | 325 | nS | ||
| Qrr | Reverse Recovery Charge | 1836 | C | ||
| Thermal Characteristics | |||||
| RJC | Junction-to-Case | 2.5 | /W | ||
2504301112_Minos-IRF840_C2980294.pdf
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