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quality Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package factory
quality Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package factory

Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package

Key Attributes
Model Number: MJE2955T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
65W
Transition Frequency(fT):
3MHz
Type:
PNP
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
MJE2955T
Package:
TO-220
Product Description

Product Overview

The MJE2955T is a PNP power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for reliable circuit design. This device is suitable for applications requiring audio power amplification.

Product Attributes

  • Brand: MNS (implied from www.mns-kx.com)
  • Model: MJE2955T
  • Package Type: TO-220

Technical Specifications

Parameter Symbol Description Minimum Typical Maximum Unit Test Conditions
Absolute Maximum Ratings (Ta=25)
Storage Temperature Tstg -55 150
Junction Temperature Tj 150
Collector Power Dissipation (Tc=25) PC 65 W
Collector Power Dissipation (TA=25) PC 2 W
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -6 A
Base Current IB -2 A
Electrical Characteristics (Ta=25)
Collector-Emitter Cutoff Current ICEO -0.7 mA VCE=-60V, IB=0
Collector-Base Cutoff Current IEBO -1 mA VEB=-5V, IC=0
Collector-Emitter Saturation Current ICES -400 A VCE=-100V, VEB=0
DC Current Gain HFE(1) 30 VCE=-4V, IC=-0.3A
DC Current Gain HFE(2) 15 100 VCE=-4V, IC=-3A
Collector-Emitter Saturation Voltage VCE(sat) -1.5 V IC=-6A, IB=-600mA
Base-Emitter On Voltage VBE(on) -2.0 V VCE=-4V, IC=-6A
Collector-Emitter Breakdown Voltage BVCEO -100 V IC=-30mA, IB=0
Characteristic Frequency fT 3.0 MHz VCE=-10V, IC=-500mA, f=1MHz
Pin Configuration (TO-220)
Pin 1 B Base
Pin 2 C Collector
Pin 3 E Emitter

Notes:

  • Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Please do not exceed absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
  • Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

Contact Information:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen City
Postal Code: 518025
Phone: 0755-83273777


2410121439_Minos-MJE2955T_C19189959.pdf

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