Silicon N channel Enhanced MOSFET Minos MLS65R190W with 650V Drain to Source Voltage and 20A Current
Key Attributes
Model Number:
MLS65R190W
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.7pF
Number:
1 N-channel
Output Capacitance(Coss):
67pF
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
1.197nF
Gate Charge(Qg):
38nC
Mfr. Part #:
MLS65R190W
Package:
TO-247
Product Description
Product Overview
The MLS65R190W is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and improves switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key characteristics include a VDS of 650V, an ID of 20A, and an RDS(ON) of less than 0.23 at VGS=10V.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Package: TO-247
- Certifications: Not specified in the provided text.
- Origin: Not specified in the provided text.
- Material: Silicon
- Color: Not applicable
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDSS | Drain-to-Source Breakdown Voltage | 650 | V | |||
| ID | Drain Current (continuous) at TC=25 | 20 | A | |||
| IDM | Drain Current (pulsed) | 80 | A | |||
| VGS | Gate to Source Voltage | ±30 | V | |||
| Ptot | Total Dissipation at TC=25 | 43 | W | |||
| Tj Max. | Operating Junction Temperature | 150 | ||||
| Eas | Single Pulse Avalanche Energy | 806 | mJ | |||
| VDS | Drain-source Voltage | VGS=0V, ID=250µA | 650 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V,ID=10A | 0.19 | 0.23 | Ω | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, D=250µµA | 2 | 4 | V | |
| IDSS | Drain-Source Leakage Current | VDS=650V, VGS= 0V | 1.0 | µµA | ||
| IGSS(F) | Gate-Source Forward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gate-Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Capacitance | Ciss | VGS = 0V, VDS = 100V, f = 1.0MHz | 1197 | pF | ||
| Coss | 67 | |||||
| Crss | 3.7 | |||||
| Gate Charge | Qg | ID =20A, VDD =520V, VGS = 10V | 38 | nC | ||
| Qgs | 9.0 | |||||
| Qgd | 20 | |||||
| Switching Time | td(on) | ID =4.0A, VDD =325V, VGS =10V, RG=25Ω | 20 | nS | ||
| tr | 56 | |||||
| td(off) | 106 | |||||
| tf | 41 | |||||
| Source-Drain Diode Characteristics | IS | Continuous Source Current (Body Diode) TC=25 °C | -- | -- | 20 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 80 | A | |
| VSD | Diode Forward Voltage ID=20A, VGS=0V | -- | -- | 1.4 | V | |
| Diode Recovery Characteristics | trr | Reverse Recovery Time VDD=50V,IF=20A, dIF/dt=100A/µs | -- | 214.3 | ns | |
| Qrr | Reverse Recovery Charge | -- | 1.7 | nC |
2410171638_Minos-MLS65R190W_C41433060.pdf
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