High voltage power transistor Minos MJL21194 NPN triple diffused for 100 watt audio amplifier output stages
Key Attributes
Model Number:
MJL21194
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
200W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
250V
Operating Temperature:
-
Mfr. Part #:
MJL21194
Package:
TO-264
Product Description
Product Overview
The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads may significantly decrease product reliability even if operating conditions are within absolute maximum ratings.
Product Attributes
- Brand: Minos Silicon
- Type: NPN Triple Diffused
- Complementary to: MJL21193
- Package: TO-264
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-base voltage | VCBO | 400 | V | ||||
| Collector-emitter voltage | VCEO | 250 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current | IC | 16 | A | ||||
| Base current | IB | 5 | A | ||||
| Collector power dissipation (Tc=25) | PC | 200 | W | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector cut-off current | ICBO | uA | VCB=250V; IE=0 | 10 | |||
| Emitter cut-off current | IEBO | uA | VEB=5V; Ic=0 | 10 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 250 | V | IC=50mA,IB=0 | |||
| DC current gain | hFE | VCE=5V; IC=8A | 20 | 80 | |||
| DC current gain | hFE(2) | VCE=5V; IC=16A | 8 | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=8A; IB=0.8A | 1.4 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=16A; IB=3.2A | 4 | |||
| Base-emitter voltage | VBE | V | VCE=5V;IC=8A | 2.2 | |||
| Transition frequency | fT | MHz | VCE=10V; IC=1A | 4 | |||
| Thermal Characteristics | |||||||
| Junction-to-Case Thermal Resistance | RJC | /W | 0.63 | ||||
2410122013_Minos-MJL21194_C5377667.pdf
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