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quality Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications factory
quality Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications factory

Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications

Key Attributes
Model Number: BC856B,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC856B,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia BC856, BC857, and BC858 series are PNP general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, offering low current (max. 100 mA) and low voltage (max. 65 V) capabilities. They are suitable for general-purpose use where reliable performance in a small form factor is required.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Material: Plastic
  • Transistor Type: PNP General-Purpose

Technical Specifications

Model NPN Complement VCEO (Max) IC (Max) VCBO (Max) hFE Range (Typical) Marking Code
BC856 BC846 -65 V 100 mA -80 V 125 - 475 3D%
BC856A BC846A -65 V 100 mA -80 V 125 - 250 3A%
BC856B BC846B -65 V 100 mA -80 V 220 - 475 3B%
BC857 BC847 -45 V 100 mA -50 V 125 - 800 3H%
BC857A BC847A -45 V 100 mA -50 V 125 - 250 3E%
BC857B BC847B -45 V 100 mA -50 V 220 - 475 3F%
BC857C BC847C -45 V 100 mA -50 V 420 - 800 3G%
BC858B BC848B -30 V 100 mA -30 V 220 - 475 3K%
Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) BC856; BC856A; BC856B - - -65 V
Collector-Emitter Voltage (VCEO) BC857; BC857A; BC857B; BC857C - - -45 V
Collector-Emitter Voltage (VCEO) BC858B (open base) - - -30 V
Collector Current (IC) Tamb = 25 C unless otherwise specified - - -100 mA
Peak Collector Current (ICM) Tamb = 25 C unless otherwise specified - - -200 mA
Collector-Base Voltage (VCBO) BC856; BC856A; BC856B - - -80 V
Collector-Base Voltage (VCBO) BC857; BC857A; BC857B; BC857C - - -50 V
Collector-Base Voltage (VCBO) BC858B (open emitter) - - -30 V
Emitter-Base Voltage (VEBO) Open collector - - -5 V
Total Power Dissipation (Ptot) Tamb 25 C - - 250 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Collector-Base Breakdown Voltage (V(BR)CBO) BC856; BC856A; BC856B -80 - - V
Collector-Base Breakdown Voltage (V(BR)CBO) BC857; BC857A; BC857B; BC857C -50 - - V
Collector-Base Breakdown Voltage (V(BR)CBO) BC858B (IC = -100 A; IE = 0 A) -30 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) BC856; BC856A; BC856B -65 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) BC857; BC857A; BC857B; BC857C -45 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) BC858B (IC = -2 mA; IB = 0 A) -30 - - V
Emitter-Base Breakdown Voltage (V(BR)EBO) IC = 0 A; IE = -100 A -5 - - V
Collector-Base Cut-off Current (ICBO) VCB = -30 V; IE = 0 A - -1 -15 nA
Collector-Base Cut-off Current (ICBO) VCB = -30 V; IE = 0 A; Tj = 150 C - - -4 A
Emitter-Base Cut-off Current (IEBO) VEB = -5 V; IC = 0 A - - -100 nA
Collector Capacitance (Cc) VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 4.5 - pF
Transition Frequency (fT) VCE = -5 V; IC = -10 mA; f = 100 MHz 100 - - MHz
Noise Figure (NF) IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200Hz - 2 10 dB

2410121938_Nexperia-BC856B-215_C109310.pdf

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