High speed switching diode MICROCHIP 1N6642US with metallurgically bonded non cavity glass package
Key Attributes
Model Number:
1N6642US
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@75V
Reverse Recovery Time (trr):
5ns
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - DC Reverse (Vr) (Max):
75V
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
300mA
Mfr. Part #:
1N6642US
Package:
D-5D
Product Description
Product Overview
The 1N6638US, 1N6642US, and 1N6643US are JEDEC registered, voidless, hermetically sealed switching diodes with a D-5D package. These diodes offer ultra-fast recovery times and very low capacitance, making them ideal for high-speed switching applications. They are military qualified per MIL-PRF-19500/578 and are suitable for use in computers, peripheral equipment, magnetic cores, thin-film memories, plated-wire memories, and decoding/encoding applications. RoHS compliant versions are available for commercial grades.
Product Attributes
- Brand: Microsemi Corporation
- Package: D-5D (SQ-MELF)
- Construction: Metallurgically bonded, non-cavity glass package
- Certifications: Qualified per MIL-PRF-19500/578 (JAN, JANTX, JANTXV, JANS levels)
- Polarity: Cathode indicated by band
- Terminals: Tin-Lead plate with >3% Lead (solder dip available upon request)
- Marking: Body painted and alpha numeric
- Tape & Reel: Standard per EIA-481-1-A with 12 mm tape
- RoHS Compliance: Available on commercial grade only (e3 suffix)
Technical Specifications
| Part Number | Breakdown Voltage (VBR) (V) | Working Peak Reverse Voltage (VRWM) (V) | Max Forward Voltage (VF) @ IF | Max DC Reverse Current (IR) @ VRWM / TA=+150C (nA) | Reverse Recovery Time (trr) (ns) | Max Junction Capacitance (C) @ VR=20V (pF) |
| 1N6638US | 150 | 125 | 0.8 V @ 10 mA / 1.1 V @ 200 mA | 50 | 4.5 | 2.0 |
| 1N6642US | 100 | 75 | 0.8 V @ 10 mA / 1.2 V @ 100 mA | 50 | 5.0 | 2.8 |
| 1N6643US | 75 | 50 | 0.8 V @ 10 mA / 1.2 V @ 100 mA | 75 | 5.0 | 2.8 |
2410311240_MICROCHIP-1N6642US_C3013872.pdf
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