Low voltage high frequency diode Minos MBRF10100CT for inverter and freewheeling circuit applications
Product Overview
This product is designed for low-voltage, high-frequency inverter circuits, freewheeling circuits, and protection circuits. It features a TO-220F package.
Product Attributes
- Brand: MNS (Shenzhen Minos)
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Condition |
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | -65 | 150 | ||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | ||||
| Peak Working Inverse Voltage | VRWM | 100 | V | ||||
| RMS Reverse Working Voltage | VR(RMS) | 70 | V | ||||
| Maximum DC Reverse Voltage | VR | 100 | V | ||||
| Maximum Forward Average Current | IF(AV) | (Tc=100) | A | Whole device 10A, Single device 5A | |||
| Forward Peak Surge Current | IFSM | (Single device, 60HZ) | 30 | A | |||
| Reverse Transient Current | IR | 0.1 | mA | VR=VRRM, TC = 25 C | |||
| Reverse Transient Current | IR | 50 | TC = 125 C | ||||
| Forward Peak Voltage Drop | VF | (Note 1) | 0.80 | V | IF= 5 A, TC = 25 C | ||
| Forward Peak Voltage Drop | VF | (Note 1) | 0.85 | V | IF= 5 A, TC = 125 C | ||
| Forward Peak Voltage Drop | VF | (Note 1) | 0.95 | V | IF= 10 A, TC= 25 C | ||
| Forward Peak Voltage Drop | VF | (Note 1) | 0.85 | V | IF= 10 A, TC = 125 C | ||
| Thermal Resistance Junction to Pin | Rth(j-c) | Typical | 3.0 | /W | |||
| Junction Capacitance | Cj | (Note 2) | 300 | pF | f=1MHz, VR=4V | ||
| Rate of Voltage Slew | dV/dt | 10000 | V/s |
Notes:
1. Pulse test, pulse width 300S, duty cycle 2%.
2. Test conditions f=1MHz VR=4V.
Pin Configuration:
1 - Anode A1
2 - Cathode K
3 - Anode A2
Package Description (TO-220F):
| Items | Values(mm) | MIN | MAX |
| A | 9.60 | 10.4 | |
| B | 15.4 | 16.2 | |
| B1 | 8.90 | 9.50 | |
| C | 4.30 | 4.90 | |
| C1 | 2.10 | 3.00 | |
| D | 2.40 | 3.00 | |
| E | 0.60 | 1.00 | |
| F | 0.30 | 0.60 | |
| G | 1.12 | 1.42 | |
| H | 3.40 | 3.80 | |
| I | 1.60 | 2.90 | |
| L | 12.0 | 14.0 | |
| N | 2.34 | 2.74 | |
| Q | 3.15 | 3.55 | |
| p | 2.90 | 3.30 |
Important Notes:
1. Exceeding the maximum ratings of the device may cause permanent damage and affect dependability. Please adhere to the absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
3. MOSFETs are sensitive to static electricity; protect them from damage during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
2409272003_Minos-MBRF10100CT_C5366127.pdf
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