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quality Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB113ZQAZ with DFN1010D Package and 50 Volt Rating factory
quality Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB113ZQAZ with DFN1010D Package and 50 Volt Rating factory

Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB113ZQAZ with DFN1010D Package and 50 Volt Rating

Key Attributes
Model Number: PDTB113ZQAZ
Product Custom Attributes
Input Resistor:
1kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTB113ZQAZ
Package:
DFN1010D-3
Product Description

Nexperia PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PDTB113Z/123Y/143XQA series comprises PNP Resistor-Equipped Transistors (RET) in an ultra-small DFN1010D-3 (SOT1215) surface-mounted device package. These transistors feature built-in bias resistors, simplifying circuit design and reducing component count. With a 50 V voltage rating and 500 mA output current capability, they are suitable for digital applications, controlling IC inputs, and as a cost-saving alternative for BC807/BC817 series in digital applications. The low package height and suitable for Automatic Optical Inspection (AOI) of solder joints contribute to reduced pick-and-place costs. These devices are AEC-Q101 qualified, making them suitable for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Package: DFN1010D-3 (SOT1215)
  • Certification: AEC-Q101 qualified
  • Resistor Ratio Tolerance: 10%

Technical Specifications

Type Number R1 R2 Package NXP NPN Complement VCEO (V) IO (mA)
PDTB113ZQA 1 k 10 k DFN1010D-3 (SOT1215) PDTD113ZQA -50 -500
PDTB123YQA 2.2 k 10 k DFN1010D-3 (SOT1215) PDTD123YQA -50 -500
PDTB143XQA 4.7 k 10 k DFN1010D-3 (SOT1215) PDTD143XQA -50 -500
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -50 V
IO Output current - - - -500 mA
VCBO Collector-base voltage Open emitter - - -50 V
VEBO Emitter-base voltage Open collector PDTB113ZQA - -5 V
VEBO Emitter-base voltage Open collector PDTB123YQA - -5 V
VEBO Emitter-base voltage Open collector PDTB143XQA - -7 V
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A PDTB113ZQA: -0.3
PDTB123YQA: -0.4
PDTB143XQA: -0.5		 PDTB113ZQA: -0.65
PDTB123YQA: -0.65
PDTB143XQA: -0.75		 PDTB113ZQA: -1
PDTB123YQA: -1
PDTB143XQA: -1.1		 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA PDTB113ZQA: -0.4
PDTB123YQA: -0.5
PDTB143XQA: -1		 PDTB113ZQA: -0.8
PDTB123YQA: -1
PDTB143XQA: -1.4		 PDTB113ZQA: -1.4
PDTB123YQA: -1.4
PDTB143XQA: -2		 V
R1 Bias resistor 1 (input) [1] PDTB113ZQA: 0.7
PDTB123YQA: 1.54
PDTB143XQA: 3.3		 PDTB113ZQA: 1
PDTB123YQA: 2.2
PDTB143XQA: 4.7		 PDTB113ZQA: 1.3
PDTB123YQA: 2.86
PDTB143XQA: 6.1		 k
R2/R1 Bias resistor ratio [1] PDTB113ZQA: 9
PDTB123YQA: 4.1
PDTB143XQA: 1.91		 PDTB113ZQA: 10
PDTB123YQA: 4.55
PDTB143XQA: 2.13		 PDTB113ZQA: 11
PDTB123YQA: 5
PDTB143XQA: 2.34		 -
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF
fT Transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz [2] - 150 - MHz

[1] See section test information for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.


2410121816_Nexperia-PDTB113ZQAZ_C552124.pdf

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