Power MOSFET Minos MPT065N08P with typical RDS on of 5.4 milliohms and 85 volt maximum voltage rating
Key Attributes
Model Number:
MPT065N08P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.5pF
Number:
1 N-channel
Output Capacitance(Coss):
510pF
Pd - Power Dissipation:
156.2W
Input Capacitance(Ciss):
3.217nF
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
MPT065N08P
Package:
TO-220
Product Description
Product Overview
The MPT065N08P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy ruggedness, making it ideal for demanding applications such as motor drivers and high-speed switching.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @ VGS=10V (m) | ID (A) | EAS (mJ) | PD (W) |
| MPT065N08P | TO-220 | 85 | <6.5 (Typ: 5.4) | 120 (Silicon Limited) / 80 (Package Limited) | 100 | 156.2 |
| MPT065N08S | TO-263 | 85 | <6.5 (Typ: 5.4) | 120 (Silicon Limited) / 80 (Package Limited) | 100 | 156.2 |
2410171638_Minos-MPT065N08P_C41433066.pdf
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