Silicon Power MOSFET Minos MP3N150S Featuring High Voltage and Low On Resistance for Power Switching
Key Attributes
Model Number:
MP3N150S
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
RDS(on):
9Ω@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF
Number:
1 N-channel
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
1.938nF
Gate Charge(Qg):
9.3nC@10V
Mfr. Part #:
MP3N150S
Package:
TO-263
Product Description
Product Overview
The MP3N150S is a Silicon N-Channel Power MOSFET utilizing advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers. Key features include a high VDS of 1500V, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Package: TO-263
- Certifications: Not specified
- Material: Silicon
- Color: Not specified
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| Drain-to-Source Breakdown Voltage (VDSS) | 1500 | V | |||
| Drain Current (continuous) (ID) | Tc=25 | 3 | A | ||
| Drain Current (pulsed) (IDM) | 12 | A | |||
| Gate to Source Voltage (VGS) | +/-30 | V | |||
| Total Dissipation (Ptot) | Tc=25 | 250 | W | ||
| Max. Operating Junction Temperature (Tj) | 175 | ||||
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | |||
| Electrical Parameters | |||||
| Drain-source Voltage (VDS) | VGS =0V, ID=250A | 1500 | V | ||
| Static Drain-to-Source on-Resistance (RDS(on)) | VGS =10V, ID=1.5A | 5.2 | 9.0 | ||
| Gated Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 3.0 | 4.1 | 5.0 | V |
| Drain to Source leakage Current (IDSS) | VDS=1500V, VGS = 0V | 1 | A | ||
| Gated to Source Foward Leakage (IGSS(F)) | VGS= +30V | 100 | nA | ||
| Gated to Source Reverse Leakage (IGSS(R)) | VGS= -30V | -100 | nA | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, f=1.0MHZ | 1938 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, f=1.0MHZ | 104 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, f=1.0MHZ | 10.2 | pF | ||
| Switching Characteristics | |||||
| Turn-on Delay Time (td(on)) | VDD=750V,ID=3A, RG=10 | 33.8 | nS | ||
| Turn-on Rise Time (tr) | VDD=750V,ID=3A, RG=10 | 16.7 | nS | ||
| Turn-off Delay Time (td(off)) | VDD=750V,ID=3A, RG=10 | 56 | nS | ||
| Turn-off Fall Time (tf) | VDD=750V,ID=3A, RG=10 | 27.6 | nS | ||
| Total Gate Charge (Qg) | VDS=750V ID=3A VGS=10V | 9.3 | nC | ||
| Gate-Source Charge (Qgs) | VDS=750V ID=3A VGS=10V | 174.9 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=750V ID=3A VGS=10V | 5.3 | nC | ||
| Source-Drain Diode Characteristics | |||||
| S-D Current(Body Diode) (ISD) | 3 | A | |||
| Pulsed S-D Current(Body Diode) (ISDM) | 12 | A | |||
| Diode Forward Voltage (VSD) | VGS =0V, IDS=3.0A | 1.5 | V | ||
| Reverse Recovery Time (trr) | TJ=25,IF=3.0A di/dt=100A/us | 302.3 | nS | ||
| Reverse Recovery Charge (Qrr) | TJ=25,IF=3.0A di/dt=100A/us | 9.9 | nC | ||
| Thermal Characteristics | |||||
| Junction-to-Case (RJC) | 1.7 | /W | |||
2410171639_Minos-MP3N150S_C41433074.pdf
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