Nexperia PUMD13 115 resistor equipped double transistor ideal for digital applications and ic inputs
Key Attributes
Model Number:
PUMD13,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD13,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia PUMD13 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. This device offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design and reducing component count. It is ideal for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia
- Package Type: TSSOP6 (SOT363)
- Material: Plastic
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| General | |||||
| Collector-emitter voltage (NPN/PNP) | Open base | - | - | 50 | V |
| Output current (per transistor) | - | - | - | 100 | mA |
| Bias resistor R1 (input) | [1] | 3.3 | 4.7 | 6.1 | k |
| Bias resistor ratio R2/R1 | [1] | 8 | 10 | 12 | - |
| Limiting Values (Per transistor; for PNP transistor TR2 with negative polarity where applicable) | |||||
| Collector-base voltage | Open emitter | - | - | 50 | V |
| Collector-emitter voltage | Open base | - | - | 50 | V |
| Emitter-base voltage | Open collector | - | - | 5 | V |
| Input voltage (TR1 positive) | - | - | - | 30 | V |
| Input voltage (TR1 negative) | - | -5 | - | - | V |
| Input voltage (TR2 positive) | - | - | - | 5 | V |
| Input voltage (TR2 negative) | - | -30 | - | - | V |
| Total power dissipation (per device) | Tamb ≤ 25 °C [1] | - | - | 300 | mW |
| Junction temperature | - | - | - | 150 | °C |
| Ambient temperature | - | -65 | - | 150 | °C |
| Storage temperature | - | -65 | - | 150 | °C |
| Characteristics (Tamb = 25 °C, unless otherwise specified) | |||||
| Collector-base breakdown voltage (TR2 PNP) | IC = 100 µA; IE = 0 A | 50 | - | - | V |
| Collector-emitter breakdown voltage (TR1 NPN) | IC = 2 mA; IB = 0 A | 50 | - | - | V |
| DC current gain (TR1 NPN) | VCE = 5 V; IC = 10 mA | 100 | - | - | - |
| DC current gain (TR2 PNP) | VCE = -5 V; IC = -10 mA | 100 | - | - | - |
| Collector capacitance (TR1 NPN) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Collector capacitance (TR2 PNP) | VCB = -10 V; IE = 0 A; f = 1 MHz | - | - | 3 | pF |
| Transition frequency (TR1 NPN) | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 230 | - | MHz |
| Transition frequency (TR2 PNP) | VCE = -5 V; IC = -10 mA; f = 100 MHz [2] | - | 180 | - | MHz |
| Package Information | |||||
| Package Outline | TSSOP6 (SOT363) | - | - | - | - |
| Body Dimensions | - | 2.1 x 1.25 x 0.95 | - | - | mm |
| Pitch | - | 0.65 | - | - | mm |
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
2410010332_Nexperia-PUMD13-115_C193171.pdf
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