Power MOSFET Minos MD3N150 Silicon N Channel Device with Low On Resistance and High Current Capacity
Key Attributes
Model Number:
MD3N150
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.2Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
2.4pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
1.938nF@25V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
9.3nC@10V
Mfr. Part #:
MD3N150
Package:
TO-3PH
Product Description
Product Description
The MD3N150 is a Silicon N-Channel Power MOSFET engineered with advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key advantages include low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
Technical Specifications
| Ordering Code | Package | Product Code | VDS (V) | RDS(ON) @VGS=10V, ID=1.5A () | ID (A) | Ptot (W) | Tj Max (C) |
| MP3N150-S | TO-263 | MP3N150S | 1500 | 5.2 (Typ) | 3 | 250 | 175 |
| MPF3N150-F | TO-220F | MPF3N150 | 1500 | 5.2 (Typ) | 3 | 250 | 175 |
| MD3N150 | TO-3PH | MD3N150 | 1500 | 5.2 (Typ) | 3 | 250 | 175 |
2510141606_Minos-MD3N150_C6719399.pdf
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