battery management system component Minos MPT037N08 n channel power mosfet with improved switching performance
Key Attributes
Model Number:
MPT037N08
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
185A
RDS(on):
3.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 N-channel
Output Capacitance(Coss):
1.181nF
Input Capacitance(Ciss):
6.234nF
Pd - Power Dissipation:
208.3W
Gate Charge(Qg):
124nC@10V
Mfr. Part #:
MPT037N08
Package:
TO-263
Product Description
Product Description
The MPT037N08 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @ VGS=10V (m) | ID (A) | EAS (mJ) | PD (W) |
| MPT037N08-P | TO-220 | 85 | <3.7 (Typ: 3) | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 |
| MPT037N08-S | TO-263 | 85 | <3.7 (Typ: 3) | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| OFF Characteristics | ||||||
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 85 | 95 | -- | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V @ TC=125C | -- | -- | 100 | A |
| IGSS(F) | Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=50A | -- | 3 | 3.7 | m |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 6234 | -- | pF |
| Coss | Output Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 1181 | -- | pF |
| Crss | Reverse Transfer Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 97 | -- | pF |
| Qg | Total Gate Charge | VDD=42.5V, ID=50A, VGS=10V | -- | 124 | -- | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 41 | -- | ns |
| tr | Rise Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 68 | -- | ns |
| td(off) | Turn-Off Delay Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 76 | -- | ns |
| tf | Fall Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 44 | -- | ns |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current | -- | -- | -- | 120 | A |
| ISM | Maximum Pulsed Current | -- | -- | -- | 480 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| trr | Reverse Recovery Time | IS=30A, di/dt=100A/us | -- | 80 | -- | ns |
| Qrr | Reverse Recovery Charge | IS=30A, di/dt=100A/us | -- | 112 | -- | uC |
2410122024_Minos-MPT037N08_C3036703.pdf
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