N channel Power MOSFET Minos MPT04N10P Featuring Double Trench Design for Battery Management Systems
Key Attributes
Model Number:
MPT04N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
172A
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Pd - Power Dissipation:
208W
Output Capacitance(Coss):
1.594nF
Input Capacitance(Ciss):
6.6nF
Gate Charge(Qg):
114nC@10V
Mfr. Part #:
MPT04N10P
Package:
TO-220
Product Description
Product Overview
The MPT04N10P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for Battery Management Systems (BMS) and high-current switching applications.
Product Attributes
- Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V | |
| Continuous Drain Current | ID | 172 | A | Silicon Limited |
| Continuous Drain Current | ID | 120 | A | Package Limited |
| Continuous Drain Current | ID | 109.2 | A | TC = 100C, Silicon Limited |
| Pulsed Drain Current | IDM | 480 | A | Note1 |
| Gate-to-Source Voltage | VGS | 20 | V | |
| Avalanche Energy | EAS | 552 | mJ | Note2 |
| Power Dissipation | PD | 208 | W | |
| Derating Factor above 25C | 1.67 | W/ | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Maximum Temperature for Soldering | TL | 260 | ||
| Drain to Source Breakdown Voltage | VDSS | 100 (Typ: 110) | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current | IDSS | 1 | A | VDS=100V, VGS= 0V, Tj= 25 |
| Drain to Source Leakage Current | IDSS | 100 | A | VDS=80V, VGS= 0V, Tj= 125 |
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V |
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V |
| Drain-to-Source On- Resistance | RDS(ON) | 3.3 (Typ: 4) | m | VGS=10V, ID=50A(Note4) |
| Gate Threshold Voltage | VGS(TH) | 2.0 (Typ: 3.0, Max: 4.0) | V | VDS= VGS, ID= 250A(Note4) |
| Input Capacitance | Ciss | 6600 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Output Capacitance | Coss | 1594 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 150 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Total Gate Charge | Qg | 114 | nC | ID =50A, VDD =50V, VGS = 10V |
| Gate to Source Charge | Qgs | 27 | nC | ID =50A, VDD =50V, VGS = 10V |
| Gate to Drain (Miller)Charge | Qgd | 24.5 | nC | ID =50A, VDD =50V, VGS = 10V |
| Turn-on Delay Time | td(ON) | 28 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Rise Time | tr | 27 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Turn-Off Delay Time | td(OFF) | 59 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Fall Time | tf | 30 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Continuous Source Current | IS | 120 | A | TC=25 C |
| Maximum Pulsed Current | ISM | 480 | A | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=50A, VGS=0V(Note4) |
| Reverse Recovery Time | Trr | 70 | ns | IS=65A, Tj= 25C, dIF/dt=150A/us, VGS=0V |
| Reverse Recovery Charge | Qrr | 237 | nC | IS=65A, Tj= 25C, dIF/dt=150A/us, VGS=0V |
| Thermal Resistance (Junction-to-Case) | RJC | 0.6 | /W | |
| Thermal Resistance (Junction-to-Ambient) | RJA | 62.5 | /W |
2509171410_Minos-MPT04N10P_C51933925.pdf
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