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quality Low threshold P Channel Vertical DMOS FET MICROCHIP VP3203N8-G suitable for switching applications factory
quality Low threshold P Channel Vertical DMOS FET MICROCHIP VP3203N8-G suitable for switching applications factory

Low threshold P Channel Vertical DMOS FET MICROCHIP VP3203N8-G suitable for switching applications

Key Attributes
Model Number: VP3203N8-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1.6W
Mfr. Part #:
VP3203N8-G
Package:
SOT-89-3
Product Description

Product Overview

The Supertex VP3203 is a low threshold, P-Channel, enhancement-mode (normally-off) Vertical DMOS FET. It utilizes Supertexs silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for various switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.

Product Attributes

  • Brand: Supertex inc.
  • Origin: Silicon-gate manufacturing process
  • Certifications: Lead (Pb)-free / RoHS compliant (-G denotes this)

Technical Specifications

Part NumberPackageBVDSS/BVDGSRDS(ON) (max)ID(ON) (min)Typical Thermal Resistance (ja)
VP3203N3-G3-Lead TO-92-30V0.6-4.0A132C/W
VP3203N3-G P0023-Lead TO-92-30V0.6-4.0A132C/W
VP3203N3-G P0033-Lead TO-92-30V0.6-4.0A132C/W
VP3203N3-G P0053-Lead TO-92-30V0.6-4.0A132C/W
VP3203N3-G P0133-Lead TO-92-30V0.6-4.0A132C/W
VP3203N3-G P0143-Lead TO-92-30V0.6-4.0A132C/W
VP3203TO-243AA (SOT-89)-30V0.6-4.0A133C/W

Electrical Characteristics

ParameterSymbolMinTypMaxUnitsConditions
Drain-to-source breakdown voltageBVDSS-30--VVGS = 0V, ID = -10mA
Gate threshold voltageVGS(th)-1.0--3.5VVGS = VDS, ID= -10mA
Change in VGS(th) with temperatureVGS(th)---5.5mV/CVGS = VDS, ID= -10mA
Gate body leakageIGSS---1.0AVGS = 20V, VDS = 0V
Zero gate voltage drain currentIDSS---10nAVGS = 0V, VDS = Max Rating
Zero gate voltage drain current (high temp)IDSS---1.0mAVDS = 0.8 Max Rating, VGS = 0V, TA = 125C
On-state drain currentID(ON)--14-AVGS = -10V, VDS = -5.0V
Static drain-to-source on-state resistanceRDS(ON)--1.0VGS = -4.5V, ID = -1.5A (TO-92)
Static drain-to-source on-state resistanceRDS(ON)--1.0VGS = -4.5V, ID = -750mA (SOT-89)
Static drain-to-source on-state resistanceRDS(ON)--0.6VGS = -10V, ID = -3.0A (TO-92)
Static drain-to-source on-state resistanceRDS(ON)--0.6VGS = -10V, ID = -1.5A (SOT-89)
Change in RDS(ON) with temperatureRDS(ON)--1.0%/CVGS = -10V, ID = -1.5A
Forward transductanceGFS10002000-mmhoVDS = -25V, ID = -2.0A
Input capacitanceCISS-200300pFVGS = 0V, VDS = -25V, f = 1.0MHz
Common source output capacitanceCOSS-100120pFVGS = 0V, VDS = -25V, f = 1.0MHz
Reverse transfer capacitanceCRSS-4560pFVGS = 0V, VDS = -25V, f = 1.0MHz
Turn-on delay timetd(ON)--10nsVDD = -25V, ID = -2.0A, RGEN = 10
Rise timetr--15nsVDD = -25V, ID = -2.0A, RGEN = 10
Turn-off delay timetd(OFF)--25nsVDD = -25V, ID = -2.0A, RGEN = 10
Fall timetf--25nsVDD = -25V, ID = -2.0A, RGEN = 10
Diode forward voltage dropVSD---1.6VVGS = 0V, ISD = -1.5A
Reverse recovery timetrr--300nsVGS = 0V, ISD = -1.0A

Applications

  • Motor controls
  • Converters
  • Amplifiers
  • Switches
  • Power supply circuits
  • Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

2410121448_MICROCHIP-VP3203N8-G_C629232.pdf

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