Minos MLS60R150W MOSFET featuring low Rdson under 150 milliohms and fast switching for SMPS applications
Key Attributes
Model Number:
MLS60R150W
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
26A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
126mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
56pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.86nF@25V
Pd - Power Dissipation:
220W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
MLS60R150W
Package:
TO-247
Product Description
Product Overview
The MLS60R150W is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for high-speed switching applications such as SMPS and general-purpose use.
Product Attributes
- Brand: MNS-KX
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions | |||
| KEY CHARACTERISTICS | ||||||
| VDS | 600 | V | ||||
| Rdson | <150 | m | VGS=10V, ID=26A (Typ:126m) | |||
| Switching | Fast | |||||
| Avalanche Tested | 100% | |||||
| dv/dt Capability | Improved | |||||
| APPLICATIONS | ||||||
| High Frequency Switching Mode Power Supply | ||||||
| ORDERING INFORMATION | ||||||
| Ordering Code | MLS60R150-W | |||||
| Package | TO-247 | |||||
| Packing | Tube | |||||
| ABSOLUTE RATINGS | ||||||
| Parameter | Rating | Units | TC= 25C, unless otherwise specified | |||
| VDSS | 600 | V | ||||
| ID (Continuous Drain Current) | 26 | A | ||||
| ID (Continuous Drain Current) | 16 | A | TC = 100 C | |||
| IDM (Pulsed Drain Current) | 75.9 | A | (Note1) | |||
| VGS | 30 | V | ||||
| EAS (Single Pulse Avalanche Energy) | 600 | mJ | (Note2) | |||
| dv/dt (Peak Diode Recovery) | 15 | V/ns | (Note3) | |||
| PD (Power Dissipation) | 220 | W | TO-220, TO-262, TO-263, TO-3PN | |||
| Derating Factor | 1.75 | W/ | above 25C | |||
| PD (Power Dissipation) | 42 | W | TO-247 | |||
| Derating Factor | 0.33 | W/ | above 25C | |||
| TJ, Tstg (Operating Junction and Storage Temperature Range) | 150, 55 to 150 | |||||
| TL (Maximum Temperature for Soldering) | 300 | |||||
| Thermal characteristics | ||||||
| Parameter | Rating | Units | ||||
| RJC (Junction-to-Case) | 0.57 | /W | ||||
| RJA (Junction-to-Ambient) | 62.5 | /W | ||||
| Electrical Characteristics | ||||||
| Parameter | Test Conditions | Values | Units | Min. | Typ. | Max. |
| VDSS (Drain to Source Breakdown Voltage) | VGS=0V, ID=250A | 600 | V | -- | -- | -- |
| BVDSS/ TJ (Bvdss Temperature Coefficient) | ID=250uA, Reference25 | -- | V/ | -- | 0.63 | -- |
| IDSS (Drain to Source Leakage Current) | VDS=600V, VGS= 0V, Tj = 25 | -- | A | -- | -- | 1 |
| IDSS (Drain to Source Leakage Current) | VDS=480V, VGS= 0V, Tj = 125 | -- | A | -- | -- | 100 |
| IGSS(F) (Gate to Source Forward Leakage) | VGS=+30V | -- | nA | -- | -- | 100 |
| IGSS(R) (Gate to Source Reverse Leakage) | VGS=-30V | -- | nA | -- | -- | -100 |
| RDS(ON) (Drain-to-Source On- Resistance) | VGS=10V, ID=9A(Note4) | -- | -- | 0.126 | 0.15 | |
| VGS(TH) (Gate Threshold Voltage) | VDS= VGS, ID = 250A(Note4) | 2.5 | V | 2.5 | -- | 4.5 |
| Dynamic Characteristics | ||||||
| Parameter | Test Conditions | Values | Units | Min. | Typ. | Max. |
| Rg (Gate resistance) | f = 1.0MHz | -- | -- | 3.2 | -- | |
| Ciss (Input Capacitance) | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | PF | -- | 1860 | -- |
| Coss (Output Capacitance) | -- | PF | -- | 1060 | -- | |
| Crss (Reverse Transfer Capacitance) | -- | PF | -- | 56 | -- | |
| Switching Characteristics | ||||||
| Parameter | Test Conditions | Values | Units | Min. | Typ. | Max. |
| td(ON) (Turn-on Delay Time) | ID =8.5A, VDD = 300V, VGS = 10V, RG =5 | -- | ns | -- | 100.4 | -- |
| tr (Rise Time) | -- | ns | -- | 61 | -- | |
| td(OFF) (Turn-Off Delay Time) | -- | ns | -- | 220.6 | -- | |
| tf (Fall Time) | -- | ns | -- | 54.8 | -- | |
| Qg (Total Gate Charge) | ID =11A, VDD =400V, VGS = 10V | -- | nC | -- | 43 | -- |
| Qgs (Gate to Source Charge) | -- | nC | -- | 10 | -- | |
| Qgd (Gate to Drain (Miller)Charge) | -- | nC | -- | 16 | -- | |
| Source-Drain Diode Characteristics | ||||||
| Parameter | Test Conditions | Values | Units | Min. | Typ. | Max. |
| IS (Continuous Source Current (Body Diode)) | TC=25 C | -- | A | -- | -- | 26 |
| ISM (Maximum Pulsed Current (Body Diode)) | -- | A | -- | -- | 75.9 | |
| VSD (Diode Forward Voltage) | IS=11A, VGS=0V(Note4) | -- | V | -- | -- | 1.2 |
| Trr (Reverse Recovery Time) | IS=11A, Tj = 25C, dIF/dt=100A/us | -- | ns | -- | 267.6 | -- |
| Qrr (Reverse Recovery Charge) | -- | nC | -- | 4069 | -- | |
| Irrm (Reverse Recovery Current) | -- | A | -- | 26.8 | -- | |
2410122013_Minos-MLS60R150W_C7587860.pdf
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