High Current N Channel MOSFET Minos IRFR1205TR with Low RDS ON and Superior Heat Dissipation Package
Key Attributes
Model Number:
IRFR1205TR
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
44W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
IRFR1205TR
Package:
TO-252
Product Description
Product Overview
The IRFR1205TR is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS-KX (implied from www.mns-kx.com)
- Origin: Shenzhen Minos (implied from contact information)
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | 80 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 44 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 56 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance,Junction-to-Case | RJC | 3.4 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.3 | 1.8 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A | 25 | 30 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=10A | 30 | 40 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=10A | 11 | S | ||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 670 | pF | ||
| Output Capacitance | Coss | 76 | pF | |||
| Reverse Transfer Capacitance | Crss | 66 | pF | |||
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RGEN=10 | 19.2 | nS | ||
| Turn-on Rise Time | tr | 6.4 | nS | |||
| Turn-Off Delay Time | td(off) | 29.2 | nS | |||
| Turn-Off Fall Time | tf | 8.2 | nS | |||
| Total Gate Charge | Qg | VDS=48V,ID=10A VGS=10V | 21 | nC | ||
| Gate-Source Charge | Qgs | 5 | nC | |||
| Gate-Drain Charge | Qg d | 6.5 | nC | |||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | 1.2 | V | ||
| Reverse Recovery Time | Trr | Tj=25IF=10Adi/dt=100A/uS note3 | 33.6 | nS | ||
| Reverse Recovery Charge | Qrr | 32.1 | nC |
2410122012_Minos-IRFR1205TR_C20624230.pdf
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