Nexperia PUMB1 115 PNP PNP Double Resistor Equipped Transistors Integrating Built In Bias Resistors
Key Attributes
Model Number:
PUMB1,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB1,115
Package:
SOT-363
Product Description
Nexperia PEMB1; PUMB1 PNP/PNP Resistor-Equipped Transistors
Product Overview
The Nexperia PEMB1 and PUMB1 are PNP/PNP double Resistor-Equipped Transistors (RET) designed for surface-mounting applications. These devices integrate built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for automotive and industrial applications such as low-current peripheral driving and control of IC inputs.
Product Attributes
- Brand: Nexperia
- Type: PNP/PNP double Resistor-Equipped Transistors (RET)
- Certifications: AEC-Q101 qualified
- Resistor Values: R1 = 22 k, R2 = 22 k
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | - | -100 | mA |
| R1 | Bias resistor 1 (input) | - | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -10 | V |
| VI | Input voltage | positive | - | - | +10 | V |
| VI | Input voltage | negative | - | - | -40 | V |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | -100 | mA |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | PEMB1 (SOT666) | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PUMB1 (SOT363) | - | - | 625 | K/W |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -180 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 60 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -150 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.1 | -0.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -5 mA | -2.5 | -1.7 | - | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C; PEMB1 (SOT666) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PUMB1 (SOT363) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PEMB1 (SOT666) | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PUMB1 (SOT363) | - | - | 300 | mW |
| Rth(j-a) | Thermal resistance junction to ambient | PEMB1 (SOT666) | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PUMB1 (SOT363) | - | - | 417 | K/W |
| Models & Packages | ||||||
| Type number | Package Name | Package Description | - | - | - | - |
| PEMB1 | SOT666 | 6 leads, ultra small and flat lead plastic surface-mounted package | - | - | - | - |
| PUMB1 | SOT363 | 6 leads, very small SC-88 plastic surface-mounted package | - | - | - | - |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
2504101957_Nexperia-PUMB1-115_C553484.pdf
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