Vertical DMOS P Channel FET MICROCHIP VP3203N3-G with Low Threshold Voltage and High Breakdown Voltage
Key Attributes
Model Number:
VP3203N3-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
740mW
Mfr. Part #:
VP3203N3-G
Package:
TO-92-3
Product Description
Product Overview
The Supertex VP3203 is a low threshold, P-Channel, enhancement-mode Vertical DMOS FET that utilizes a silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for a wide range of switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Supertex inc.
- Origin: Silicon-gate manufacturing process
- Certifications: Lead (Pb)-free / RoHS compliant (-G denotes package)
Technical Specifications
| Part Number | Package | BVDSS/BVDGS | RDS(ON) (max) | ID(ON) (min) | Typical Thermal Resistance (ja) |
| VP3203N3-G | 3-Lead TO-92 | -30V | 0.6 | -4.0A | 132C/W |
| VP3203N3-G | 3-Lead TO-243AA (SOT-89) | -30V | 0.6 | -4.0A | 133C/W |
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
| Drain-to-source breakdown voltage | BVDSS | -30 | - | - | V | VGS = 0V, ID = -10mA |
| Gate threshold voltage | VGS(th) | -1.0 | - | -3.5 | V | VGS = VDS, ID= -10mA |
| Change in VGS(th) with temperature | VGS(th) | - | - | -5.5 | mV/C | VGS = VDS, ID= -10mA |
| Gate body leakage | IGSS | - | - | -1.0 | -100 nA | VGS = 20V, VDS = 0V |
| Zero gate voltage drain current | IDSS | - | - | -10 A | VGS = 0V, VDS = Max Rating | |
| Zero gate voltage drain current (TA=125C) | IDSS | - | - | -1.0 mA | VDS = 0.8 Max Rating, VGS = 0V, TA = 125C | |
| On-state drain current | ID(ON) | - | -14 | - | A | VGS = -10V, VDS = -5.0V |
| Static drain-to-source on-state resistance (TO-92) | RDS(ON) | - | - | 1.0 | VGS = -4.5V, ID = -1.5A | |
| Static drain-to-source on-state resistance (SOT-89) | RDS(ON) | - | - | 1.0 | VGS = -4.5V, ID = -750mA | |
| Static drain-to-source on-state resistance (TO-92) | RDS(ON) | - | - | 0.6 | VGS = -10V, ID = -3.0A | |
| Static drain-to-source on-state resistance (SOT-89) | RDS(ON) | - | - | 0.6 | VGS = -10V, ID = -1.5A | |
| Change in RDS(ON) with temperature | RDS(ON) | - | - | 1.0 %/C | VGS = -10V, ID = -1.5A | |
| Forward transductance | GFS | 1000 | 2000 | - | mmho | VDS = -25V, ID = -2.0A |
| Input capacitance | CISS | - | 200 | 300 pF | VGS = 0V, VDS = -25V, f = 1.0MHz | |
| Common source output capacitance | COSS | - | 100 | 120 pF | VGS = 0V, VDS = -25V, f = 1.0MHz | |
| Reverse transfer capacitance | CRSS | - | 45 | 60 pF | VGS = 0V, VDS = -25V, f = 1.0MHz | |
| Turn-on delay time | td(ON) | - | - | 10 ns | VDD = -25V, ID = -2.0A, RGEN = 10 | |
| Rise time | tr | - | - | 15 ns | VDD = -25V, ID = -2.0A, RGEN = 10 | |
| Turn-off delay time | td(OFF) | - | - | 25 ns | VDD = -25V, ID = -2.0A, RGEN = 10 | |
| Fall time | tf | - | - | 25 ns | VDD = -25V, ID = -2.0A, RGEN = 10 | |
| Diode forward voltage drop | VSD | - | - | -1.6 V | VGS = 0V, ISD = -1.5A | |
| Reverse recovery time | trr | - | 300 | - ns | VGS = 0V, ISD = -1.0A |
2410121448_MICROCHIP-VP3203N3-G_C632612.pdf
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