High current n channel mosfet Minos MPT08N10P optimized for motor driver circuits and power management
Key Attributes
Model Number:
MPT08N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
670pF
Input Capacitance(Ciss):
2.35nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
44.5nC@10V
Mfr. Part #:
MPT08N10P
Package:
TO-220
Product Description
Product Overview
The MPT08N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| General Features | |||||
| VDS | 100 | V | |||
| RDS(on) | VGS=10V, ID=80A | 7.5 | 8 | m | |
| ID | Continuous Drain Current, Silicon Limited | 80 | A | ||
| ID | Continuous Drain Current, Package Limited | 60 | A | ||
| ID | Continuous Drain Current @TC=100C, Silicon Limited | 45 | A | ||
| IDM | Pulsed Drain Current | 240 | A | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| EAS | Avalanche Energy (L=0.5mH, Ias=25A, Start TJ=25) | 156 | mJ | ||
| PD | Power Dissipation | 83 | W | ||
| Derating Factor | above 25C | 0.66 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | ||
| TL | Maximum Temperature for Soldering | 260 | |||
| OFF Characteristics | |||||
| VDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | 100 | 110 | V | |
| IDSS | Drain-Source Leakage Current (VDS=100V, VGS=0V) | 1 | A | ||
| IDSS | Drain-Source Leakage Current (VDS=80V, VGS=0V @TC=125C) | 100 | A | ||
| IGSS(F) | Gate-Source Forward Leakage (VGS=+20V) | 100 | nA | ||
| IGSS(R) | Gate-Source Reverse Leakage (VGS=-20V) | -100 | nA | ||
| ON Characteristics | |||||
| RDS(on) | Drain-Source On-Resistance (VGS=10V, ID=30A) | 7.5 | 8 | m | |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250A) | 2 | 3 | 4 | V |
| Dynamic Characteristics | |||||
| Ciss | Input Capacitance (VDS=50V, VGS=0, f=1MHz) | 2350 | pF | ||
| Coss | Output Capacitance | 670 | pF | ||
| Crss | Reverse Transfer Capacitance | 10 | pF | ||
| Qg | Total Gate Charge (VDD=50V, ID=30A, VGS=10V) | 44.5 | nC | ||
| Qgs | Gate-Source charge | 12.9 | |||
| Qgd | Gate-Drain charge | 10.8 | |||
| RG | Gate resistance (VGS=0, VDS=0) | 1.1 | |||
| Switching Characteristics | |||||
| td(on) | Turn-On Delay Time (VDD=50V, ID=30A, VGS=10V, RG=5, Resistive Load) | 15 | ns | ||
| tr | Rise Time | 10 | |||
| td(off) | Turn-Off Delay Time | 33 | |||
| tf | Fall Time | 13 | |||
| Source-Drain Diode Characteristics | |||||
| IS | Continuous Source Current | 80 | A | ||
| ISM | Maximum Pulsed Current | 240 | A | ||
| VSD | Diode Forward Voltage (VGS=0V, IS=30A) | 1.2 | V | ||
| Trr | Reverse Recovery Time (Is=30A,VGS=0, di/dt=100A/us) | 43 | ns | ||
| Qrr | Reverse Recovery Charge | 114 | nC | ||
| Thermal Characteristics | |||||
| RJC | thermal resistance, Junction-Case | 1.5 | /W | ||
| RJA | thermal resistance, Junction-Ambient | 62.5 | /W | ||
2410171638_Minos-MPT08N10P_C41433064.pdf
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