Lateral DMOS transistor MICROCHIP LND150N3 G with integral source drain diode and drive requirements
Key Attributes
Model Number:
LND150N3-G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
30mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1kΩ@0V,0.5mA
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
10pF@10V
Pd - Power Dissipation:
740mW
Mfr. Part #:
LND150N3-G
Package:
TO-92
Product Description
Product Overview
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, excellent thermal stability, an integral source-drain diode, high input impedance, low CISS, and ESD gate protection.
Product Attributes
- Brand: Supertex inc.
- Website: www.supertex.com
- Certifications: Lead (Pb)-free / RoHS compliant package (-G denotes this)
Technical Specifications
| Part Number | Package | BVDSX/BVDGX (V) | RDS(ON) (max) | IDSS (min) | Packing |
| LND150K1-G | TO-236AB (SOT-23) | 500 | 1.0k | 1.0mA | 3000/Reel |
| LND150N3-G | TO-92 | 500 | 1.0k | 1.0mA | 1000/Bag |
| LND150N3-G P002 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P003 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P005 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P013 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P014 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N8-G | TO-243AA (SOT-89) | 500 | 1.0k | 1.0mA | 2000/Reel |
| Parameter | Min | Typ | Max | Units | Conditions |
| BVDSX (Drain-to-source breakdown voltage) | 500 | - | - | V | VGS = -10V, ID = 1.0mA |
| VGS(OFF) (Gate-to-source off voltage) | -1.0 | - | -3.0 | V | VGS = 25V, ID = 100nA |
| VGS(OFF) (Change in VGS(OFF) with temperature) | - | - | 5.0 | mV/OC | VGS = 25V, ID = 100nA |
| IGSS (Gate body leakage current) | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | nA | VGS = -10V, VDS = 450V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | A | VDS = 0.8V Max Rating, VGS = -10V, TA = 125OC |
| IDSS (Saturated drain-to-source current) | 1.0 | - | 3.0 | mA | VGS = 0V, VDS = 25V |
| RDS(ON) (Static drain-to-source on-state resistance) | - | 850 | 1000 | VGS = 0V, ID = 0.5mA | |
| RDS(ON) (Change in RDS(ON) with temperature) | - | - | 1.2 | %/OC | VGS = 0V, ID = 0.5mA |
| GFS (Forward transconductance) | 1.0 | 2.0 | - | m | VDS = 0V, ID = 1.0mA |
| CISS (Input capacitance) | - | 7.5 | 10 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| COSS (Common source output capacitance) | - | 2.0 | 3.5 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| CRSS (Reverse transfer capacitance) | - | 0.5 | 1.0 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| td(ON) (Turn-on delay time) | - | 0.09 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tr (Rise time) | - | 0.45 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| td(OFF) (Turn-off delay time) | - | 0.1 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tf (Fall time) | - | 1.3 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| VSD (Diode forward voltage drop) | - | - | 0.9 | V | VGS = -10V, ISD = 1.0mA |
| trr (Reverse recovery time) | - | 200 | - | ns | VGS = -10V, ISD = 1.0mA |
2410121642_MICROCHIP-LND150N3-G_C631704.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
