PNP Resistor Equipped Transistor Nexperia PEMB10 115 for Automotive and Digital Circuit Applications

Key Attributes
Model Number: PEMB10,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
21
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMB10,115
Package:
SOT-666
Product Description

Nexperia PEMB10 / PUMB10 PNP/PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PEMB10 and PUMB10 are PNP/PNP Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices offer a 100 mA output current capability and feature built-in bias resistors (R1 = 2.2 k, R2 = 47 k), which simplify circuit design, reduce component count, and lower pick-and-place costs. They are suitable for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications. The PEMB10 and PUMB10 are AEC-Q101 qualified, making them suitable for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Technology: PNP/PNP Resistor-Equipped Transistors (RET)
  • Package Type: Surface-Mounted Device (SMD)
  • Certifications: AEC-Q101 qualified
  • Built-in Resistors: R1 = 2.2 k, R2 = 47 k

Technical Specifications

Model Package NPN/PNP Complement Package Configuration Output Current (IO) Collector-Emitter Voltage (VCEO) Bias Resistor R1 Bias Resistor Ratio (R2/R1)
PEMB10 SOT666 (ultra small and flat lead) PEMD10 N/A -100 mA -50 V 1.54 - 2.86 k (Typ. 2.20 k) 17 - 26 (Typ. 21)
PUMB10 SOT363 (SC-88, very small) PUMH10 N/A -100 mA -50 V 1.54 - 2.86 k (Typ. 2.20 k) 17 - 26 (Typ. 21)

Additional Technical Data

Parameter Conditions Min Typ Max Unit
Collector-Base Voltage (VCBO) Open emitter - - -50 V
Emitter-Base Voltage (VEBO) Open collector - - -5 V
Input Voltage (VI) Positive - - +5 V
Input Voltage (VI) Negative - - -12 V
Peak Collector Current (ICM) - - - -100 mA
Total Power Dissipation (Ptot) Tamb 25 C (PEMB10/PUMB10) - - 200 (SOT666/SOT363 per transistor) / 300 (per device) mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - +150 C
Storage Temperature (Tstg) - -65 - +150 C
Collector-Base Cut-off Current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A - - -100 nA
Emitter-Base Cut-off Current (IEBO) VEB = -5 V; IC = 0 A - - -180 A
DC Current Gain (hFE) VCE = -5 V; IC = -10 mA 100 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = -5 mA; IB = -0.25 mA - - -100 mV
Off-State Input Voltage (VI(off)) VCE = -5 V; IC = -100 A - -0.6 -0.5 V
On-State Input Voltage (VI(on)) VCE = -0.3 V; IC = -5 mA -1.1 -0.75 - V
Collector Capacitance (Cc) VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
Transition Frequency (fT) VCB = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications

Contact Information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com


2410121745_Nexperia-PEMB10-115_C552384.pdf

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