PNP Resistor Equipped Transistor Nexperia PEMB10 115 for Automotive and Digital Circuit Applications
Nexperia PEMB10 / PUMB10 PNP/PNP Resistor-Equipped Transistors
Product Overview
The Nexperia PEMB10 and PUMB10 are PNP/PNP Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices offer a 100 mA output current capability and feature built-in bias resistors (R1 = 2.2 k, R2 = 47 k), which simplify circuit design, reduce component count, and lower pick-and-place costs. They are suitable for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications. The PEMB10 and PUMB10 are AEC-Q101 qualified, making them suitable for automotive applications.
Product Attributes
- Brand: Nexperia
- Technology: PNP/PNP Resistor-Equipped Transistors (RET)
- Package Type: Surface-Mounted Device (SMD)
- Certifications: AEC-Q101 qualified
- Built-in Resistors: R1 = 2.2 k, R2 = 47 k
Technical Specifications
| Model | Package | NPN/PNP Complement | Package Configuration | Output Current (IO) | Collector-Emitter Voltage (VCEO) | Bias Resistor R1 | Bias Resistor Ratio (R2/R1) |
|---|---|---|---|---|---|---|---|
| PEMB10 | SOT666 (ultra small and flat lead) | PEMD10 | N/A | -100 mA | -50 V | 1.54 - 2.86 k (Typ. 2.20 k) | 17 - 26 (Typ. 21) |
| PUMB10 | SOT363 (SC-88, very small) | PUMH10 | N/A | -100 mA | -50 V | 1.54 - 2.86 k (Typ. 2.20 k) | 17 - 26 (Typ. 21) |
Additional Technical Data
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open emitter | - | - | -50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | -5 | V |
| Input Voltage (VI) | Positive | - | - | +5 | V |
| Input Voltage (VI) | Negative | - | - | -12 | V |
| Peak Collector Current (ICM) | - | - | - | -100 | mA |
| Total Power Dissipation (Ptot) | Tamb 25 C (PEMB10/PUMB10) | - | - | 200 (SOT666/SOT363 per transistor) / 300 (per device) | mW |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Ambient Temperature (Tamb) | - | -65 | - | +150 | C |
| Storage Temperature (Tstg) | - | -65 | - | +150 | C |
| Collector-Base Cut-off Current (ICBO) | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| Collector-Emitter Cut-off Current (ICEO) | VCE = -30 V; IB = 0 A | - | - | -100 | nA |
| Emitter-Base Cut-off Current (IEBO) | VEB = -5 V; IC = 0 A | - | - | -180 | A |
| DC Current Gain (hFE) | VCE = -5 V; IC = -10 mA | 100 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| Off-State Input Voltage (VI(off)) | VCE = -5 V; IC = -100 A | - | -0.6 | -0.5 | V |
| On-State Input Voltage (VI(on)) | VCE = -0.3 V; IC = -5 mA | -1.1 | -0.75 | - | V |
| Collector Capacitance (Cc) | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| Transition Frequency (fT) | VCB = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Contact Information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
2410121745_Nexperia-PEMB10-115_C552384.pdf
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