Silicon N Channel MOSFET Minos MD25N50 with 100 Amp Pulsed Drain Current and Enhanced Avalanche Energy
Key Attributes
Model Number:
MD25N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
180mΩ@10V,12.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.5nF@25V
Pd - Power Dissipation:
320W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MD25N50
Package:
TO-3PN
Product Description
Product Description
The MD25N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Utilizing advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is ideal for Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon N-Channel Enhanced MOSFET
- Certifications: RoHS product
Technical Specifications
| Parameter | TO-3PN (MD25N50) | TO-3PF |
| VDS (Drain-to-Source Voltage) | 500 V | 500 V |
| RDS(ON) (@VGS=10V, ID=25A) | <220m (Typ:170m) | <220m (Typ:170m) |
| ID (Continuous Drain Current @ TC=25C) | 25 A | 25 A |
| ID (Continuous Drain Current @ TC=100C) | 15.8 A | 15.8 A |
| IDM (Pulsed Drain Current) | 100 A | 100 A |
| VGS (Gate-to-Source Voltage) | 30 V | 30 V |
| EAS (Single Pulse Avalanche Energy) | 1500 mJ | 1500 mJ |
| PD (Power Dissipation @ TC=25C) | 320 W | 62.5 W |
| RJC (Junction-to-Case) | 0.39 /W | 2.0 /W |
| RJA (Junction-to-Ambient) | 62.5 /W | 62.5 /W |
| TJ, Tstg (Operating & Storage Temp Range) | -55 to 150 | -55 to 150 |
| Bvdss (Drain to Source Breakdown Voltage) | 500 V | 500 V |
| IDSS (Drain to Source Leakage Current @ VDS=500V, VGS=0V, Tj=25C) | 10 A | 10 A |
| IGSS (Gate to Source Leakage Current) | 100 nA | 100 nA |
| RDS(ON) (@VGS=10V, ID=10A) | 0.17 (Typ) | 0.17 (Typ) |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 V | 2.0 - 4.0 V |
| Ciss (Input Capacitance) | 3500 pF (Typ) | 3500 pF (Typ) |
| Coss (Output Capacitance) | 350 pF (Typ) | 350 pF (Typ) |
| Crss (Reverse Transfer Capacitance) | 25 pF (Typ) | 25 pF (Typ) |
| td(ON) (Turn-on Delay Time) | 38 ns (Typ) | 38 ns (Typ) |
| tr (Rise Time) | 75 ns (Typ) | 75 ns (Typ) |
| td(OFF) (Turn-Off Delay Time) | 99 ns (Typ) | 99 ns (Typ) |
| tf (Fall Time) | 83 ns (Typ) | 83 ns (Typ) |
| Qg (Total Gate Charge) | 72 nC (Typ) | 72 nC (Typ) |
| Is (Continuous Source Current - Body Diode) | 25 A | 25 A |
| VSD (Diode Forward Voltage) | 1.0 V (Typ) | 1.0 V (Typ) |
| Trr (Reverse Recovery Time) | 551 ns (Typ) | 551 ns (Typ) |
| Qrr (Reverse Recovery Charge) | 7025 nC (Typ) | 7025 nC (Typ) |
| Irrm (Reverse Recovery Current) | 25.5 A (Typ) | 25.5 A (Typ) |
2411220027_Minos-MD25N50_C6719388.pdf
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