Power MOSFET MPF20N65 Featuring Silicon N Channel Technology and 0.39 Ohm Typical RDS ON Resistance
Key Attributes
Model Number:
MPF20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
460mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
3.12nF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
MPF20N65
Package:
TO-220F
Product Description
Product Overview
The MPF20N65 is a silicon N-Channel Enhanced Power MOSFET developed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for high-speed switching and general-purpose applications, particularly in Switch Mode Power Supplies (SMPS).
Product Attributes
- Brand: MNS-KX
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Package | Product Code | Continuous Drain Current (Tc=25C) | Continuous Drain Current (Tc=100C) | Drain-to-Source Voltage | RDS(ON) Typ. (VGS=10V, ID=10A) | Gate Threshold Voltage Typ. | Junction-to-Case Thermal Resistance | Power Dissipation (TO-247/TO-3PN) | Power Dissipation (TO-220) | Power Dissipation (TO-220F) |
| TO-220F | MPF20N65 | 20 A | 12.6 A | 650 V | 0.39 | 2.0 V | 2.6 /W | N/A | N/A | 48 W |
| TO-247/TO-3PN | MPF20N65 | 20 A | 12.6 A | 650 V | 0.39 | 2.0 V | 0.42 /W | 300 W | N/A | N/A |
| TO-220 | MPF20N65 | 20 A | 12.6 A | 650 V | 0.39 | 2.0 V | 0.54 /W | N/A | 230 W | N/A |
2410171638_Minos-MPF20N65_C41433061.pdf
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