Durable Minos IRFP9240 P channel MOSFET ideal for high frequency switching mode power supply circuits
Key Attributes
Model Number:
IRFP9240
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
340mΩ@10V,6.6A
Gate Threshold Voltage (Vgs(th)):
2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
81pF
Number:
1 P-Channel
Output Capacitance(Coss):
370pF
Input Capacitance(Ciss):
1.4nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
IRFP9240
Package:
TO-247
Product Description
Product Description
The IRFP9240 is a silicon P-channel Enhanced MOSFET utilizing advanced MOSFET technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is well-suited for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.
Key Characteristics
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Applications
- High frequency switching mode power supply
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: RoHS product
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Test Conditions | Values (Min. Typ. Max.) | Units |
| ABSOLUTE RATINGS | ||||
| VDSS | Drain-to-Source Voltage | -200 | V | |
| ID | Continuous Drain Current | -11 | A | |
| IDM | Pulsed Drain Current (Note1) | -44 | A | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55-+150 | ||
| VGS | Gate-to-Source Voltage | 20 | V | |
| EAS | Single Pulse Avalanche Energy (Note2) | 165 | mJ | |
| PD | Power Dissipation (TC = 25C) | Linear Derating Factor | 0.6 | W/ |
| THERMAL CHARACTERISTICS | ||||
| RthJC | Junction-to-Case | 12 | K/W | |
| RthJA | Junction-to-Ambient | 48 | K/W | |
| OFF CHARACTERISTICS | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | -200 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =-200V, VGS= 0V,Tj =25 | -- 5 | A |
| IGSS(R) | Gate-Source Leakage | VGS =-30V | -- -120 | nA |
| ON CHARACTERISTICS | ||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=-6.6A) | -- 0.34 0.42 | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A(Note4) | -2 -- -4 | V |
| DYNAMIC CHARACTERISTICS | ||||
| Ciss | Input Capacitance | VGS = 0V, VDS = -25V, f = 1.0MHz | -- 1200 | PF |
| Coss | Output Capacitance | -- 370 | PF | |
| Crss | Reverse Transfer Capacitance | -- 81 | PF | |
| SWITCHING CHARACTERISTICS | ||||
| td(ON) | Turn-on Delay Time | VDD = -160V, ID =-13.5A, RG = 25 | -- 28 56 | ns |
| tr | Rise Time | -- 74 148 | ns | |
| td(OFF) | Turn-Off Delay Time | -- 260 520 | ns | |
| tf | Fall Time | -- 120 240 | ns | |
| Qg | Total Gate Charge | VDD =-100V, ID = -13.5A, VGS = -10V | -- 52 68 | nC |
| Qgs | Gate to Source Charge | -- 9 | -- | |
| Qgd | Gate to Drain (Miller)Charge | -- 25 | -- | |
| SOURCE-DRAIN DIODE CHARACTERISTICS | ||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | -- -11 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- -44 | A | |
| VSD | Diode Forward Voltage | IS=-11A, VGS=0V(Note4) | -- 5 | V |
| trr | Reverse Recovery Time | IS=-11A, Tj = 25C dIF/dt=100A/us, | -- 250 300 | ns |
| Qrr | Reverse Recovery Charge | -- 2.9 3.6 | nC | |
2410122024_Minos-IRFP9240_C5366133.pdf
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