MICROCHIP TN2540N8 G N Channel Vertical DMOS FET with Low Threshold Voltage and High Input Impedance
Key Attributes
Model Number:
TN2540N8-G
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Input Capacitance(Ciss):
125pF
Pd - Power Dissipation:
-
Mfr. Part #:
TN2540N8-G
Package:
SOT-89
Product Description
Product Overview
The TN2540 is a low-threshold, enhancement-mode (normally-off) N-Channel Vertical DMOS FET from Supertex, utilizing a silicon-gate manufacturing process. This device offers the power handling capabilities of bipolar transistors combined with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Applications include logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, photo-voltaic drives, analog switches, general-purpose line drivers, and telecom switches.
Product Attributes
- Brand: Supertex
- Origin: Sunnyvale, CA 94089
- Certifications: RoHS compliant ('Green') available with '-G' suffix
Technical Specifications
| Device | Package | BVDSS/BVDGS (V) | RDS(ON) (max) () | ID(ON) (min) (A) | VGS(th) (max) (V) | ID (continuous) (mA) | ID (pulsed) (A) | Power Dissipation @TA = 25OC (W) | jc (OC/W) | ja (OC/W) |
| TN2540 | TO-92 (N3) | 400 | 12 | 1.0 | 2.0 | 175 | 2.0 | 0.74 | 125 | 170 |
| TN2540N3-G | TO-92 (N3) | 400 | 12 | 1.0 | 2.0 | 175 | 2.0 | 0.74 | 125 | 170 |
| TN2540N8-G | TO-243AA (SOT-89) | 400 | 12 | 1.0 | 2.0 | 260 | 1.8 | 1.6 | 15 | 78 |
| TN2540ND | Die* | 400 | 12 | 1.0 | 2.0 | - | - | - | - | - |
Electrical Characteristics (TA = 25OC unless otherwise specified)
| Symbol | Parameter | Min | Typ | Max | Units | Conditions |
| BVDSS | Drain-to-source breakdown voltage | 400 | - | - | V | VGS = 0V, ID = 100A |
| VGS(th) | Gate threshold voltage | 0.6 | - | 2.0 | V | VGS = VDS, ID= 1.0mA |
| VGS(th) | Change in VGS(th) with temperature | - | -2.5 | -4.0 | mV/OC | VGS = VDS, ID= 1.0mA |
| IGSS | Gate body leakage | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| IDSS | Zero gate voltage drain current | - | - | 10 | A | VGS = 0V, VDS = Max Rating |
| - | - | 1.0 | mA | VDS = 0.8 Max Rating, VGS = 0V, TA = 125C | ||
| ID(ON) | On-state drain current | 0.3 | 0.5 | - | A | VGS = 4.5V, VDS = 25V |
| 0.75 | 1.0 | - | A | VGS = 10V, VDS = 25V | ||
| RDS(ON) | Static drain-to-source on-state resistance | - | 8.0 | 12 | VGS = 4.5V, ID = 150mA | |
| - | 8.0 | 12 | VGS = 10V, ID = 500mA | |||
| RDS(ON) | Change in RDS(ON) with temperature | - | - | 0.75 | %/OC | VGS = 10V, ID = 500mA |
| GFS | Forward transductance | 125 | 200 | - | mmho | VDS = 25V, ID = 100mA |
| CISS | Input capacitance | - | 95 | 125 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| COSS | Common source output capacitance | - | 20 | 70 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| CRSS | Reverse transfer capacitance | - | 10 | 25 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| td(ON) | Turn-on delay time | - | - | 20 | ns | VDD = 25V, ID = 1.0A, RGEN = 25 |
| tr | Rise time | - | - | 15 | ns | VDD = 25V, ID = 1.0A, RGEN = 25 |
| td(OFF) | Turn-off delay time | - | - | 25 | ns | VDD = 25V, ID = 1.0A, RGEN = 25 |
| tf | Fall time | - | - | 20 | ns | VDD = 25V, ID = 1.0A, RGEN = 25 |
| VSD | Diode forward voltage drop | - | - | 1.8 | V | VGS = 0V, ISD = 200mA |
| trr | Reverse recovery time | - | 300 | - | ns | VGS = 0V, ISD = 1.0A |
2410121817_MICROCHIP-TN2540N8-G_C629195.pdf
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