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quality NPN PNP Double Transistor in SOT363 Package Nexperia PUMD2 125 with 50 Volt Collector Emitter Rating factory
quality NPN PNP Double Transistor in SOT363 Package Nexperia PUMD2 125 with 50 Volt Collector Emitter Rating factory

NPN PNP Double Transistor in SOT363 Package Nexperia PUMD2 125 with 50 Volt Collector Emitter Rating

Key Attributes
Model Number: PUMD2,125
Product Custom Attributes
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD2,125
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single, compact SOT363 (SC-88) SMD plastic package. Designed for low current peripheral driving and controlling IC inputs, this device simplifies circuit design by integrating built-in bias resistors, thereby reducing component count and pick-and-place costs. It offers a 100 mA output current capability and a 50 V collector-emitter voltage rating, making it suitable for replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Configuration: NPN/PNP double transistor

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - 100 mA
R1 Bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 Bias resistor ratio 0.8 1 1.2
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage TR1 (NPN) -10 - 40 V
VI Input voltage TR2 (PNP) -40 - 10 V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 60 - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 C 2.5 1.7 - V
Cc Collector capacitance TR1 (NPN): VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency TR1 (NPN): VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C - 230 - MHz
Cc Collector capacitance TR2 (PNP): VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT Transition frequency TR2 (PNP): VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C - 180 - MHz
Per device
Ptot Total power dissipation Tamb 25 C - - 300 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -55 - 150 C
Tstg Storage temperature -65 - 150 C

2504101957_Nexperia-PUMD2-125_C503382.pdf

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