NPN resistor equipped transistor Nexperia PDTC143ZU115 ideal for switching and controlling IC inputs
Key Attributes
Model Number:
PDTC143ZU,115
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143ZU,115
Package:
SOT-323
Product Description
Product Overview
The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k) that reduce component count, simplify circuit design, and lower pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified. Ideal for digital applications in automotive and industrial segments, they serve as a cost-saving alternative to BC847/857 series in digital applications, and are suitable for controlling IC inputs and switching loads.
Product Attributes
- Brand: Nexperia
- Type: NPN Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Package | PNP Complement | Package Configuration | VCEO (V) | IO (mA) | R1 Bias Resistor (k) | R2/R1 Bias Resistor Ratio |
|---|---|---|---|---|---|---|---|
| PDTC143ZE | SOT416 (JEITA SC-75) | PDTA143ZE | ultra small | 50 | 100 | 4.7 | 10 |
| PDTC143ZM | SOT883 (JEITA SC-101) | PDTA143ZM | leadless ultra small | 50 | 100 | 4.7 | 10 |
| PDTC143ZT | SOT23 (JEDEC TO-236AB) | PDTA143ZT | small | 50 | 100 | 4.7 | 10 |
| PDTC143ZU | SOT323 (JEITA SC-70) | PDTA143ZU | very small | 50 | 100 | 4.7 | 10 |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | - | 8 | 10 | 12 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 5 | V |
| VI | Input voltage | positive | - | - | +30 | V |
| VI | Input voltage | negative | - | - | -5 | V |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C (PDTC143ZE, SOT416) | - | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC143ZM, SOT883) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC143ZT, SOT23) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC143ZU, SOT323) | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC143ZE (SOT416) | - | - | 830 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC143ZM (SOT883) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC143ZT (SOT23) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC143ZU (SOT323) | - | - | 625 | K/W |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 170 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.6 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA | 1.3 | 0.9 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
2410121805_Nexperia-PDTC143ZU-115_C282553.pdf
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