Minos IRF9540NS P Channel MOSFET with 110V Drain to Source Voltage and 35A Continuous Current Rating
Product Description
The IRF9540NS is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapter/charger circuits. Key features include a high voltage rating (VDS=-110V), significant current handling capability (ID=-35A), low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: mns-kx.com
- Origin: Shenzhen Minos (implied by contact information)
- Material: Silicon
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Breakdown Voltage | -110 | V | |||
| ID | Drain Current (continuous) at Tc=25 | -35 | A | |||
| IDM | Drain Current (pulsed) | -120 | A | |||
| VGS | Gate to Source Voltage | +/-20 | V | |||
| Ptot | Total Dissipation at Tc=25 | 180 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 700 | mJ | |||
| Electrical Parameters | ||||||
| VDS | Drain-source Voltage | VGS=0V, ID=-250A | -100 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=-10V, ID=-15A | 26 | 32 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| IDSS | Drain to Source leakage Current | VDS=-110V, VGS= 0V | -1.0 | A | ||
| IGSS(F) | Gated Body Foward Leakage | VGS= +20V | 100 | nA | ||
| IGSS(R) | Gated Body Reverse Leakage | VGS= -20V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Coss | Output Capacitance | 190 | pF | |||
| Crss | Reverse Transfer Capacitance | 11 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=-20V,ID=-16A, RG=10 | 28 | nS | ||
| tr | Turn-on Rise Time | 21 | nS | |||
| td(off) | Turn-off Delay Time | 62 | nS | |||
| tf | Turn-off Fall Time | 32 | nS | |||
| Qg | Total Gate Charge | VDS=-20V ID=-16A VGS=-10V | 40 | nC | ||
| Qgs | Gate-Source Charge | 9.2 | nC | |||
| Qgd | Gate-Drain Charge | 14 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | S-D Current(Body Diode) | -35 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | -140 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=-35A | -1.5 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=-35A di/dt=100A/us | 555 | nS | ||
| Qrr | Reverse Recovery Charge | 4550 | C | |||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 2.5 | /W | |||
Package Marking And Ordering Information
| Ordering Codes | Package | Product Code | Packing |
| TO-263 | IRF9540NS | Reel |
Package Description: TO-263
| Items | MIN | MAX | Values(mm) |
| A | 9.80 | 10.40 | |
| B | 8.90 | 9.50 | |
| B1 | 0 | 0.10 | |
| C | 4.40 | 4.80 | |
| D | 1.16 | 1.37 | |
| E | 0.70 | 0.95 | |
| F | 0.30 | 0.60 | |
| G | 1.07 | 1.47 | |
| H | 1.30 | 1.80 | |
| K | 0.95 | 1.37 | |
| L1 | 14.50 | 16.50 | |
| L2 | 1.60 | 2.30 | |
| I | 0 | 0.2 | |
| Q | 0 | 8 | |
| R | 0.4 | ||
| N | 2.39 | 2.69 |
Notes: Exceeding the maximum ratings of the device may cause permanent damage and affect dependability. Please do not exceed the absolute maximum ratings during circuit design. When installing a heat sink, pay attention to torsional moment and smoothness. MOSFETs are sensitive to static electricity; protect them from damage. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
2411220027_Minos-IRF9540NS_C19272230.pdf
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