86--136 6733 2386
quality Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in Resistors for Industrial factory
quality Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in Resistors for Industrial factory

Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in Resistors for Industrial

Key Attributes
Model Number: PDTD113ET,215
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
1kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD113ET,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTD113E series offers NPN Resistor-Equipped Transistors (RET) with a 500 mA output current capability. These transistors are designed to simplify circuit design, reduce component count, and lower pick and place costs by integrating built-in bias resistors (R1 = 1 k, R2 = 1 k). They are suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC817 series in digital applications, controlling IC inputs, and switching loads. The series is available in SOT346, SOT54, and SOT23 package variants.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistors (RET)
  • Built-in Resistors: R1 = 1 k, R2 = 1 k
  • Resistor Ratio Tolerance: 10 %

Technical Specifications

Model Package Name Description VCEO (V) IO (mA) R1 Bias Resistor (k) R2/R1 Ratio
PDTD113EK SOT346 (SC-59A, TO-236) Plastic surface mounted package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
PDTD113ES SOT54 (SC-43A, TO-92) Plastic single-ended leaded (through hole) package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
PDTD113ET SOT23 (TO-236AB) Plastic surface mounted package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current (DC) - - - 500 mA
R1 Bias resistor 1 (input) - 0.7 1 1.3 k
R2/R1 Bias resistor ratio - 0.9 1.0 1.1 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 10 V
VI Input voltage negative -10 - - V
Ptot Total power dissipation Tamb 25 C (SOT346) - - 250 mW
Ptot Total power dissipation Tamb 25 C (SOT54) - - 500 mW
Ptot Total power dissipation Tamb 25 C (SOT23) - - 250 mW
Tstg Storage temperature - -65 - 150 C
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient SOT346 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT54 - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient SOT23 - - 500 K/W
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A - - 100 nA
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 50 V; IB = 0 A - - 0.5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 4 mA
hFE DC current gain VCE = 5 V; IC = 50 mA 33 - - -
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA - - 0.3 V
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A 0.6 1.1 1.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA 1.0 1.4 1.8 V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 100 MHz - 7 - pF

2410121738_Nexperia-PDTD113ET-215_C2928907.pdf

Related Products
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS factory
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.