Minos AO3400S MOSFET with trench technology providing low RDS ON and high power switching capability
Key Attributes
Model Number:
AO3400S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
24mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
36pF@15V
Number:
-
Input Capacitance(Ciss):
595pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
9.3nC@4.5V
Mfr. Part #:
AO3400S
Package:
SOT-23
Product Description
Product Overview
The AO3400S is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It is suitable for load switch and general applications, featuring high power and current handling capability. The device is lead-free and RoHS compliant.
Product Attributes
- Brand: Shenzhen Minos (implied from website and contact info)
- Origin: China (implied from contact info)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | 24 | 33 | m | |
| VGS =4.5V, ID =4A | 26 | 39 | m | |||
| VGS =2.5V, ID =3A | 33 | 55 | m | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS= VGS, ID=250 uA | 0.7 | 0.9 | 1.2 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | -1 | uA | ||
| Continuous Drain Current | ID | (TA=25) | 5.1 | A | ||
| Pulsed Drain Current | IDM | (TA=25) | 20 | A | ||
| Maximum Power Dissipation | PD | (TA=25) | 1.3 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Resistance, Junction to Ambient | RQJA | 96 | /W | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, F=1MHz | 595 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, F=1MHz | 39 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, F=1MHz | 36 | pF | ||
| Turn-on Delay Time | td(on) | VDD= 15V, RL=3, VGS = 10V, RGEN=3 | 3.0 | nS | ||
| Turn-on Rise Time | tr | VDD= 15V, RL=3, VGS = 10V, RGEN=3 | 4.5 | nS | ||
| Turn-off Delay Time | td(off) | VDD= 15V, RL=3, VGS = 10V, RGEN=3 | 25 | nS | ||
| Turn-off Fall Time | tf | VDD= 15V, RL=3, VGS = 10V, RGEN=3 | 3.8 | nS | ||
| Total Gate Charge | Qg | VDS = 15V, ID=5A, VGS =4.5V | 9.3 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15V, ID=5A, VGS =4.5V | 1.6 | nC | ||
| Gate-Drain Charge | Qg | VDS = 15V, ID=5A, VGS =4.5V | 2.1 | nC | ||
| Diode Forward Voltage | VSD | VGS =0V, ID=5A | 1.2 | V |
2410121955_Minos-AO3400S_C19189948.pdf
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