Power MOSFET device Minos MD9N90 featuring low ON resistance ideal for power switching applications
Key Attributes
Model Number:
MD9N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-
RDS(on):
970mΩ@10V,4.5A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
23pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.53nF@25V
Pd - Power Dissipation:
350W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MD9N90
Package:
TO-3P
Product Description
Product Description
The MD9N90 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers. Key advantages include low ON resistance and low reverse transfer capacitances.
Product Attributes
- Brand: MNS (mns-kx.com)
- Origin: Shenzhen, China
- Package: TO-3P
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-to-Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 900 | V | ||
| Drain Current (continuous) at Tc=25 | ID | 9 | A | |||
| Drain Current (Pulsed) | IDM | 36 | A | |||
| Gate to Source Voltage | VGS | 30 | V | |||
| Total Dissipation at Tc=25 | Ptot | 350 | W | |||
| Max. Operating Junction Temperature | Tj Max. | 175 | ||||
| Single Pulse Avalanche Energy | Eas | 960 | mJ | |||
| Static Drain-to-Source on-Resistance | RDS(on) | VGS=10V, ID=4.5A | 0.97 | 1.15 | ||
| Gated Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 3.0 | 3.95 | 5.0 | V |
| Drain to Source leakeage Current | IDSS | VDS=900V, VGS= 0V | 1.0 | A | ||
| Gated to Source Forward Leakage | IGSS(F) | VGS= +30V | 100 | nA | ||
| Gated to Source Reverse Leakage | IGSS(R) | VGS= -30V | -100 | nA | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1.0MHZ | 2530 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1.0MHZ | 215 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1.0MHZ | 23 | pF | ||
| Turn-on Delay Time | td(on) | VDD=450V,ID=9A, RG=25 | 60 | nS | ||
| Turn-on Rise Time | tr | VDD=450V,ID=9A, RG=25 | 130 | nS | ||
| Turn-off Delay Time | td(off) | VDD=450V,ID=9A, RG=25 | 130 | nS | ||
| Turn-off Fall Time | tf | VDD=450V,ID=9A, RG=25 | 85 | nS | ||
| Total Gate Charge | Qg | VDS=720V ID=9A VGS=10V | 60 | nC | ||
| Gate-Source Charge | Qgs | VDS=720V ID=9A VGS=10V | 13 | nC | ||
| Gate-Drain Charge | Qgd | VDS=720V ID=9A VGS=10V | 25 | nC | ||
| S-D Current(Body Diode) | ISD | 9 | A | |||
| Pulsed S-D Current(Body Diode) | ISDM | 36 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IDS=9A | 1.5 | V | ||
| Reverse Recovery Time | trr | TJ=25,IS=9A di/dt=100A/us | 1000 | nS | ||
| Reverse Recovery Charge | Qrr | TJ=25,IS=9A di/dt=100A/us | 17.0 | C | ||
| Junction-to-Case Thermal Resistance | RJC | 0.42 | /W |
2410122013_Minos-MD9N90_C6719396.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
