Nexperia PDTA114YU115 Series PNP Resistor Equipped Transistors for Automotive and Industrial Control
Nexperia PDTA114Y Series PNP Resistor-Equipped Transistors
The Nexperia PDTA114Y series comprises PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in the automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in such applications. Key uses include controlling IC inputs and switching loads.
Product Attributes
- Brand: Nexperia (formerly NXP Standard Product business)
- Type: PNP Resistor-Equipped Transistor (RET)
- Certification: AEC-Q101 qualified
- Resistor Values: R1 = 10 k, R2 = 47 k
Technical Specifications
| Type Number | Package | NPN Complement | Package Configuration | Output Current (IO) (Max) | R1 Bias Resistor (Typ) | R2/R1 Bias Resistor Ratio (Typ) | Collector-Emitter Voltage (VCEO) (Open Base) (Max) |
|---|---|---|---|---|---|---|---|
| PDTA114YE | SOT416 (SC-75) | PDTC114YE | ultra small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YM | SOT883 (SC-101) | PDTC114YM | leadless ultra small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YT | SOT23 (TO-236AB) | PDTC114YT | small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YU | SOT323 (SC-70) | PDTC114YU | very small | -100 mA | 10 k | 4.7 | -50 V |
Pinning Information
| Package | Pin | Description |
|---|---|---|
| SOT23; SOT323; SOT416 | 1 | input (base) |
| SOT23; SOT323; SOT416 | 2 | GND (emitter) |
| SOT23; SOT323; SOT416 | 3 | output (collector) |
| SOT883 | 1 | input (base) |
| SOT883 | 2 | GND (emitter) |
| SOT883 | 3 | output (collector) |
Ordering Information
| Type number | Package Name | Description | Version |
|---|---|---|---|
| PDTA114YE | SC-75 | plastic surface-mounted package; 3 leads | SOT416 |
| PDTA114YM | SC-101 | leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm | SOT883 |
| PDTA114YT | - | plastic surface-mounted package; 3 leads | SOT23 |
| PDTA114YU | SC-70 | plastic surface-mounted package; 3 leads | SOT323 |
Marking Codes
| Type number | Marking code[1] |
|---|---|
| PDTA114YE | 36 |
| PDTA114YM | DF |
| PDTA114YT | *29 |
| PDTA114YU | *55 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | collector-base voltage | open emitter | - | -50 | V |
| VCEO | collector-emitter voltage | open base | - | -50 | V |
| VEBO | emitter-base voltage | open collector | - | -6 | V |
| VI | input voltage | positive | - | +6 | V |
| VI | input voltage | negative | - | -40 | V |
| IO | output current | - | - | -100 | mA |
| ICM | peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | total power dissipation | Tamb 25 C, PDTA114YE (SOT416) | - | 150 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA114YM (SOT883) | - | 250 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA114YT (SOT23) | - | 250 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA114YU (SOT323) | - | 200 | mW |
| Tj | junction temperature | - | - | 150 | C |
| Tamb | ambient temperature | - | -65 | +150 | C |
| Tstg | storage temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Rth(j-a) | thermal resistance from junction to ambient in free air | PDTA114YE (SOT416) [1][2] | - | - | 830 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient in free air | PDTA114YM (SOT883) [2][3] | - | - | 500 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient in free air | PDTA114YT (SOT23) [1] | - | - | 500 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient in free air | PDTA114YU (SOT323) [1] | - | - | 625 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -150 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 100 | - | - | - |
| VCEsat | collector-emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.7 | -0.5 | V |
| VI(on) | on-state input voltage | VCE = -0.3 V; IC = -1 mA | -1.4 | -0.8 | - | V |
| R1 | bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | bias resistor ratio | - | 3.7 | 4.7 | 5.7 | - |
| Cc | collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz [1] | - | 180 | - | MHz |
2410121814_Nexperia-PDTA114YU-115_C552048.pdf
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