Nexperia PDTA114YU115 Series PNP Resistor Equipped Transistors for Automotive and Industrial Control

Key Attributes
Model Number: PDTA114YU,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
6V
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA114YU,115
Package:
SOT-323-3
Product Description

Nexperia PDTA114Y Series PNP Resistor-Equipped Transistors

The Nexperia PDTA114Y series comprises PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in the automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in such applications. Key uses include controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia (formerly NXP Standard Product business)
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Certification: AEC-Q101 qualified
  • Resistor Values: R1 = 10 k, R2 = 47 k

Technical Specifications

Type Number Package NPN Complement Package Configuration Output Current (IO) (Max) R1 Bias Resistor (Typ) R2/R1 Bias Resistor Ratio (Typ) Collector-Emitter Voltage (VCEO) (Open Base) (Max)
PDTA114YE SOT416 (SC-75) PDTC114YE ultra small -100 mA 10 k 4.7 -50 V
PDTA114YM SOT883 (SC-101) PDTC114YM leadless ultra small -100 mA 10 k 4.7 -50 V
PDTA114YT SOT23 (TO-236AB) PDTC114YT small -100 mA 10 k 4.7 -50 V
PDTA114YU SOT323 (SC-70) PDTC114YU very small -100 mA 10 k 4.7 -50 V

Pinning Information

Package Pin Description
SOT23; SOT323; SOT416 1 input (base)
SOT23; SOT323; SOT416 2 GND (emitter)
SOT23; SOT323; SOT416 3 output (collector)
SOT883 1 input (base)
SOT883 2 GND (emitter)
SOT883 3 output (collector)

Ordering Information

Type number Package Name Description Version
PDTA114YE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA114YM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm SOT883
PDTA114YT - plastic surface-mounted package; 3 leads SOT23
PDTA114YU SC-70 plastic surface-mounted package; 3 leads SOT323

Marking Codes

Type number Marking code[1]
PDTA114YE 36
PDTA114YM DF
PDTA114YT *29
PDTA114YU *55

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -6 V
VI input voltage positive - +6 V
VI input voltage negative - -40 V
IO output current - - -100 mA
ICM peak collector current single pulse; tp 1 ms - -100 mA
Ptot total power dissipation Tamb 25 C, PDTA114YE (SOT416) - 150 mW
Ptot total power dissipation Tamb 25 C, PDTA114YM (SOT883) - 250 mW
Ptot total power dissipation Tamb 25 C, PDTA114YT (SOT23) - 250 mW
Ptot total power dissipation Tamb 25 C, PDTA114YU (SOT323) - 200 mW
Tj junction temperature - - 150 C
Tamb ambient temperature - -65 +150 C
Tstg storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air PDTA114YE (SOT416) [1][2] - - 830 K/W
Rth(j-a) thermal resistance from junction to ambient in free air PDTA114YM (SOT883) [2][3] - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air PDTA114YT (SOT23) [1] - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air PDTA114YU (SOT323) [1] - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A - - -150 A
hFE DC current gain VCE = -5 V; IC = -5 mA 100 - - -
VCEsat collector-emitter saturation voltage IC = -5 mA; IB = -0.25 mA - - -100 mV
VI(off) off-state input voltage VCE = -5 V; IC = -100 A - -0.7 -0.5 V
VI(on) on-state input voltage VCE = -0.3 V; IC = -1 mA -1.4 -0.8 - V
R1 bias resistor 1 (input) - 7 10 13 k
R2/R1 bias resistor ratio - 3.7 4.7 5.7 -
Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz [1] - 180 - MHz

2410121814_Nexperia-PDTA114YU-115_C552048.pdf

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