N channel power mosfet MEM4N60A3G with 600 volt drain source voltage and fast switching capabilities
Key Attributes
Model Number:
MEM4N60A3G
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
19.7pF
Number:
1 N-channel
Input Capacitance(Ciss):
676pF@25V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
-
Mfr. Part #:
MEM4N60A3G
Package:
TO-220F-3
Product Description
MEM4N60 N-CHANNEL POWER MOSFET
The MEM4N60 is a high-voltage, high-speed N-channel Power MOSFET designed for switching regulator and general switching applications. It offers features such as low CRSS and fast switching capabilities.
Product Attributes
- Brand: Microne
- Origin: www.microne.com.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| General Specifications | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current (TA=25) | ID | 4 | A | |||
| Drain Current (TA=100) | ID | 2.4 | A | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Total Power Dissipation (TO-251) | Pd | TA=25 | 41 | W | ||
| Total Power Dissipation (TO-220F) | Pd | TA=25 | 33 | W | ||
| Total Power Dissipation (TO-252) | Pd | TA=25 | 57 | W | ||
| Operating Temperature Range | TOpr | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 600 | 650 | - | V |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | 2.0 | 2.8 | 4.0 | V |
| Gate-Body Leakage | IGSS | VDS=0VVGS=30V | - | 1.1 | μA | |
| Gate-Body Leakage | IGSS | VDS=0VVGS=-30V | - | -100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V VGS=0V | - | 20 | μA | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=2A | - | 1.85 | 2.3 | Ω |
| Forward Transconductance | gFS | VDS =15V, ID= 2A | - | 3.2 | 10 | S |
| Drain-Source Diode Forward Continuous Current | Is | VGS=0V | - | - | 4 | A |
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=2A | - | 0.85 | 1.4 | V |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz | - | 676 | - | pF |
| Output Capacitance | Coss | VDS = 25 V, VGS = 0 V, f = 1 MHz | - | 92.1 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25 V, VGS = 0 V, f = 1 MHz | - | 19.7 | - | pF |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 300 V, RG = 10Ω, VGS = 10V, ID = 4A | - | 21.8 | - | ns |
| Rise Time | tr | VDD = 300 V, RG = 10Ω, VGS = 10V, ID = 4A | - | 13.2 | - | ns |
| Turn-Off Delay Time | td(off) | VDD = 300 V, RG = 10Ω, VGS = 10V, ID = 4A | - | 46.8 | - | ns |
| Fall-Time | tf | VDD = 300 V, RG = 10Ω, VGS = 10V, ID = 4A | - | 12.6 | - | ns |
| Total Gate Charge | Qg | VDS = 300V, VGS = 10V, ID = 4A | - | 15.6 | - | nC |
| Gate-Source Charge | Qgs | VDS = 300V, VGS = 10V, ID = 4A | - | 3.16 | - | nC |
| Gate-Drain Charge | Qg | VDS = 300V, VGS = 10V, ID = 4A | - | 6.76 | - | nC |
2410121242_MICRONE-MEM4N60A3G_C558567.pdf
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