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quality Nexperia PDTC124TT215 NPN transistor featuring integrated bias resistors for simplified circuit design factory
quality Nexperia PDTC124TT215 NPN transistor featuring integrated bias resistors for simplified circuit design factory

Nexperia PDTC124TT215 NPN transistor featuring integrated bias resistors for simplified circuit design

Key Attributes
Model Number: PDTC124TT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
28.6kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC124TT,215
Package:
SOT-23
Product Description

Product Overview

The PDTC124T series NPN resistor-equipped transistors are designed for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. These transistors feature built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are ideal for automotive, industrial, computing, consumer, and wearable application markets.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN resistor-equipped transistors
  • Bias Resistors: R1 = 22 k, R2 = open

Technical Specifications

Type Number Package Marking Code PNP Complement EIAJ VCEO (Max) IO Output Current (DC)
PDTC124TE SOT416 (SC-75) 41 PDTA124TE - 50 V 100 mA
PDTC124TEF SOT490 (SC-89) 35 PDTA124TEF - 50 V 100 mA
PDTC124TK SOT346 (SC-59) 50 PDTA124TK - 50 V 100 mA
PDTC124TM SOT883 (SC-101) DY PDTA124TM - 50 V 100 mA
PDTC124TS SOT54 (TO-92 / SC-43A) TC124T PDTA124TS - 50 V 100 mA
PDTC124TT SOT23 (TO-236AB) *45(1) PDTA124TT - 50 V 100 mA
PDTC124TU SOT323 (SC-70) *50(1) PDTA124TU - 50 V 100 mA
Symbol Parameter Conditions Min. Typ. Max. Unit
VCBO Collector-base voltage Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 5 V
IO Output current (DC) 100 mA
ICM Peak collector current 100 mA
Ptot Total power dissipation Tamb 25 C (SOT54 note 1) 500 mW
Ptot Total power dissipation Tamb 25 C (SOT23 note 1) 250 mW
Ptot Total power dissipation Tamb 25 C (SOT346 note 1) 250 mW
Ptot Total power dissipation Tamb 25 C (SOT323 note 1) 200 mW
Ptot Total power dissipation Tamb 25 C (SOT490 notes 1 and 2) 250 mW
Ptot Total power dissipation Tamb 25 C (SOT883 notes 2 and 3) 250 mW
Ptot Total power dissipation Tamb 25 C (SOT416 note 1) 150 mW
Tstg Storage temperature 65 150 C
Tj Junction temperature 150 C
Tamb Operating ambient temperature 65 150 C
Rth(j-a) Thermal resistance junction to ambient in free air (SOT54 note 1) 250 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT23 note 1) 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT346 note 1) 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT323 note 1) 625 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT490 notes 1 and 2) 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT883 notes 2 and 3) 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air (SOT416 note 1) 833 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 100
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA 150 mV
R1 Input resistor 15.4 22 28.6 k
Cc Collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz 2.5 pF

Note: The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nexperia.com

For sales offices addresses send e-mail to: salesaddresses@nexperia.com

Nexperia B.V. 2009. All rights are reserved.


2410122008_Nexperia-PDTC124TT-215_C552197.pdf

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