Miniature surface mount MOSFET MICRONE MEM2302XG-N N channel transistor for power management circuits
Key Attributes
Model Number:
MEM2302XG-N
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
750mV
Reverse Transfer Capacitance (Crss@Vds):
23pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
240pF@10V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MEM2302XG-N
Package:
SOT-23
Product Description
Product Overview
The MEM2302XG-N is an N-channel enhancement mode field-effect transistor utilizing High Cell Density process. This miniature surface mount MOSFET offers low RDS(ON) for minimal power loss and energy conservation, making it ideal for power management circuitry. Applications include DC-DC converters, power management in portable and battery-powered products, battery chargers, and telecommunication power systems.
Product Attributes
- Brand: Microne
- Origin: China
- Package Type: SOT23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | ±12 | V | |||
| Drain Current | ID | 3 | A | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Total Power Dissipation | Pd | 0.8 | W | |||
| Operating Junction Temperature | Tj | -55 | 150 | ℃ | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 0.50 | 0.75 | 0.85 | V |
| Gate-Body Leakage | IGSS | VDS=0V, VGS=12V | - | - | 100 | nA |
| Gate-Body Leakage | IGSS | VDS=0V, VGS=-12V | - | - | -100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V, TJ=25℃ | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V, TJ=55℃ | - | - | 10 | µA |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | - | 35 | 50 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=2.8A | - | 42 | 80 | mΩ |
| Max. Diode Forward Current | IS | - | - | 3 | A | |
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=3A | - | 0.73 | 1.2 | V |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz | - | 240 | - | pF |
| Output Capacitance | Coss | - | 45 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDS = 10 V, ID3A, VGS = 5V, Rg = 6Ω | - | 2.3 | - | ns |
| Rise Time | tr | - | 3.1 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 20 | - | ns | |
| Fall-Time | tf | - | 2.5 | - | ns | |
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5 V, ID = 3A | - | 2.7 | 5 | nC |
| Gate-Source Charge | Qgs | - | 0.4 | - | - | |
| Gate-Drain Charge | Qg | - | 0.5 | - | - | |
2410121314_MICRONE-MEM2302XG-N_C489597.pdf
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