Advanced Power MOSFET Minos MPG80N06 Featuring Low Gate Charge and High ESD Capability for Switching
Key Attributes
Model Number:
MPG80N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Input Capacitance(Ciss):
3nF
Pd - Power Dissipation:
107W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MPG80N06
Package:
TO-220
Product Description
Product Description
The MPG80N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its key advantages include high ESD capability, high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 7 | 8 | m |
| Forward Transconductance | gFS | VDS=10V,ID=20A | - | 25 | - | S |
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3000 | - | pF |
| Output Capacitance | Coss | - | 270 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 240 | - | pF | |
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3 | - | 8.5 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Turn-Off Fall Time | tf | 15 | - | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=40A VGS=10V | - | 72 | - | nC |
| Gate-Source Charge | Qgs | - | 21.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 28 | - | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
| Drain-Source Voltage | VDS | - | - | 60 | V | |
| Gate-Source Voltage | VGS | - | - | 20 | V | |
| Drain Current-Continuous | ID | - | - | 80 | A | |
| Drain Current-Pulsed | IDM | (Note 1) | - | - | 320 | A |
| Maximum Power Dissipation | PD | (Tc=25) | - | - | 107 | W |
| Single pulse avalanche energy | EAS | (Note 2) | - | - | 280 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 175 | ||
| Thermal Resistance, Junction-to-Case | RJC | - | 1.4 | - | /W |
2410122013_Minos-MPG80N06_C5121606.pdf
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