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quality NPN Resistor Equipped Transistor Nexperia PDTC114ET235 for Switching Loads and Controlling IC Inputs factory
quality NPN Resistor Equipped Transistor Nexperia PDTC114ET235 for Switching Loads and Controlling IC Inputs factory

NPN Resistor Equipped Transistor Nexperia PDTC114ET235 for Switching Loads and Controlling IC Inputs

Key Attributes
Model Number: PDTC114ET,235
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC114ET,235
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTC114ET is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This transistor offers a 100 mA output current capability and serves as a cost-saving alternative to the BC847 series in digital applications. It is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • PNP Complement: PDTA114ET
  • Package Type: SOT23
  • Mounting Type: Surface-Mounted Device (SMD)
  • Material: Plastic

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VCEO Collector-emitter voltage open base - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 40 V
VI Input voltage negative -10 - - V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410121948_Nexperia-PDTC114ET-235_C552152.pdf

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