Power Switching Silicon N Channel MOSFET Minos MPG100N06 Featuring Low RDS ON and High ESD Capability
Key Attributes
Model Number:
MPG100N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
270pF
Input Capacitance(Ciss):
3nF
Pd - Power Dissipation:
107W
Gate Charge(Qg):
72nC
Mfr. Part #:
MPG100N06
Package:
TO-220
Product Description
Product Description
The MPG100N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel Power MOSFET
Technical Specifications
| Ordering Code | Package | VDS (V) | ID (A) @ Tc=25 | RDS(ON) (m) @ VGS=10V | Ptot (W) @ Tc=25 | Tj Max () | EAS (mJ) |
| MPG100N06-P | TO-220 | 60 | 100 | <7.5 | 107 | 175 | 280 |
| MPG100N06-S | TO-263 | 60 | 100 | <7.5 | 107 | 175 | 280 |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDS | Drain-to-Source Breakdown Voltage | ID=250A, VGS=0V | 60 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=46A | 6.5 | 7.5 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, D=250A | 2 | 3 | 4 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=200V, VGS=0V | 1.0 | A | ||
| IGSS(F) | Gated Body Leakage Current | VGS=+20V | 100 | nA | ||
| IGSS(R) | Gated Body Leakage Current | VGS=-20V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=40V, f=1.0MHz | 3000 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=40V, f=1.0MHz | 270 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=40V, f=1.0MHz | 240 | pF | ||
| Qg | Total Gate Charge | VDS=40V, ID=10A, VGS=10V | 72 | nC | ||
| Qgs | Gate-Source Charge | VDS=40V, ID=10A, VGS=10V | 21.5 | nC | ||
| Qgd | Gate-Drain Charge | VDS=40V, ID=10A, VGS=10V | 28 | nC | ||
| td(on) | Turn-on Delay Time | VDD=40V, ID=40A, VGS=10V, RGEN=3 | 8.5 | nS | ||
| tr | Turn-on Rise Time | VDD=40V, ID=40A, VGS=10V, RGEN=3 | 7 | nS | ||
| td(off) | Turn-off Delay Time | VDD=40V, ID=40A, VGS=10V, RGEN=3 | 40 | nS | ||
| tf | Turn-off Fall Time | VDD=40V, ID=40A, VGS=10V, RGEN=3 | 15 | nS | ||
| VSD | Diode Forward Voltage | VGS=0V, IS=155A | 1.2 | V |
2410122012_Minos-MPG100N06_C2980288.pdf
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