Low Rdson N Channel Power MOSFET Minos D15NF10L MNS with High Avalanche Energy and Stable Operation
Key Attributes
Model Number:
D15NF10L-MNS
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
80mΩ@10V,5A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
680pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
D15NF10L-MNS
Package:
TO-252
Product Description
Product Overview
The D15NF10L-MNS is an N-Channel Power MOSFET from MNS, utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is designed for a wide range of applications requiring high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The MOSFET features an excellent package for good heat dissipation, making it suitable for power switching, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 15 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 45 | A | |||
| Maximum Power Dissipation(Tc=25) | PD | 31 | W | |||
| Single pulse avalanche energy(Note 2) | EAS | 21 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 4.8 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance(Note 3) | RDS(ON) | VGS=10V, ID=5A | - | 80 | 90 | mΩ |
| Drain-Source On-State Resistance(Note 3) | RDS(ON) | VGS=4.5V, ID=5A | 90 | - | 115 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=5A, VGS=10V,RGEN=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 34 | - | nS | |
| Turn-Off Fall Time | tf | - | 9 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=3A VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2412110943_Minos-D15NF10L-MNS_C42411360.pdf
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