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quality Mini Circuits SAV 551 Plus Ultra Low Noise E PHEMT Transistor Medium Current Device for Base Station factory
quality Mini Circuits SAV 551 Plus Ultra Low Noise E PHEMT Transistor Medium Current Device for Base Station factory

Mini Circuits SAV 551 Plus Ultra Low Noise E PHEMT Transistor Medium Current Device for Base Station

Key Attributes
Model Number: SAV-551+
Product Custom Attributes
Mfr. Part #:
SAV-551+
Package:
SC-70-4
Product Description

Mini-Circuits SAV-551+ Ultra Low Noise, Medium Current E-PHEMT Transistor

Product Overview

The SAV-551+ is an ultra-low noise, high IP3 transistor device manufactured using E-PHEMT* technology, enabling operation with a single positive supply voltage. It offers an outstanding Noise Figure, particularly below 2.5 GHz, and high IP3 performance, making it an ideal amplifier for demanding base station applications. These units can also be supplied assembled into a complete module with 50 in/out, noise matched, and fully specified.

Product Attributes

  • Brand: Mini-Circuits
  • Technology: E-PHEMT*
  • Compliance: +RoHS Compliant
  • Package Style: MMM1362 (SOT-343 / SC-70)
  • Lead Finish: Matte Tin

Technical Specifications

Parameter Condition Min. Typ. Max. Units
DC Specifications
Operational Gate Voltage (VGS) VDS=3V, IDS=15 mA 0.22 0.34 0.46 V
Threshold Voltage (VTH) VDS=3V, IDS=4 mA 0.18 0.26 0.38 V
Saturated Drain Current (IDSS) VDS=3V, VGS=0 V 1.0 5.0 µA
Transconductance (GM) VDS=3V, Gm= IDS/VGS 215 285 mS
Gate Leakage Current (IGSS) VGD=VGS=-3V 95 µA
RF Specifications, Z0=50 Ohms
Noise Figure (NF) VDS=3V, IDS=15 mA, f=0.9 GHz 0.5 dB
Noise Figure (NF) VDS=3V, IDS=15 mA, f=2.0 GHz 0.6 0.9 dB
Noise Figure (NF) VDS=3V, IDS=15 mA, f=3.9 GHz 1.0 dB
Noise Figure (NF) VDS=3V, IDS=15 mA, f=5.8 GHz 1.8 dB
Gain VDS=3V, IDS=15 mA, f=0.9 GHz 20.9 dB
Gain VDS=3V, IDS=15 mA, f=2.0 GHz 14.4 15.9 17.5 dB
Gain VDS=3V, IDS=15 mA, f=3.9 GHz 11.2 dB
Gain VDS=3V, IDS=15 mA, f=5.8 GHz 7.6 dB
Output IP3 (OIP3) VDS=3V, IDS=15 mA, f=0.9 GHz 22.4 dBm
Output IP3 (OIP3) VDS=3V, IDS=15 mA, f=2.0 GHz 20.0 24.3 dBm
Output IP3 (OIP3) VDS=3V, IDS=15 mA, f=3.9 GHz 26.9 dBm
Output IP3 (OIP3) VDS=3V, IDS=15 mA, f=5.8 GHz 28.5 dBm
Power Output at 1 dB Comp. (P1dB) VDS=3V, IDS=15 mA, f=0.9 GHz 17.2 dBm
Power Output at 1 dB Comp. (P1dB) VDS=3V, IDS=15 mA, f=2.0 GHz 16.0 17.5 dBm
Power Output at 1 dB Comp. (P1dB) VDS=3V, IDS=15 mA, f=3.9 GHz 18.5 dBm
Power Output at 1 dB Comp. (P1dB) VDS=3V, IDS=15 mA, f=5.8 GHz 17.5 dBm
Maximum Ratings
Drain-Source Voltage (VDS) 5 V
Gate-Source Voltage (VGS) -5 0.7 V
Gate-Drain Voltage (VGD) -5 0.7 V
Drain Current (IDS) 100 mA
Gate Current (IGS) 2 mA
Total Dissipated Power (PDISS) 360 mW
RF Input Power (PIN) 17 dBm
Channel Temperature (TCH) 150 °C
Operating Temperature (TOP) -40 85 °C
Storage Temperature (TSTD) -65 150 °C
Thermal Resistance (ΘJC) 160 °C/W

Applications

  • Cellular
  • ISM
  • GSM
  • WCDMA
  • WiMax
  • WLAN
  • UNII and HIPERLAN

2411200046_Mini-Circuits-SAV-551-_C3289605.pdf

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