Resistor equipped transistor Nexperia PUMH7 115 ideal for low current digital and control applications

Name: Resistor equipped transistor Nexperia PUMH7 115 ideal for low current digital and control applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PUMH7,115
Availability: InStock

Key Attributes

Model Number: PUMH7,115

Product Custom Attributes

Emitter-Base Voltage VEBO:

Input Resistor:

4.7kΩ

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PUMH7,115

Package:

SOT-363

Product Description

Product Overview

The PEMH7 and PUMH7 are NPN/NPN resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 4.7 k, R2 = open), these devices are ideal for low current peripheral drivers, replacements for general-purpose transistors in digital applications, and control of IC inputs. Their design leads to reduced pick and place costs.

Product Attributes

Brand: Nexperia (formerly NXP Semiconductors)
Product Type: NPN/NPN resistor-equipped transistors
Bias Resistors: R1 = 4.7 k, R2 = open

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Quick Reference Data
VCEO	Collector-emitter voltage				50	V
IO	Output current (DC)				100	mA
TR1	NPN
TR2	NPN
R1	Bias resistor		4.7			k
R2	Bias resistor		open
Limiting Values (Per transistor)
VCBO	Collector-base voltage	open emitter			50	V
VCEO	Collector-emitter voltage	open base			50	V
VEBO	Emitter-base voltage	open collector			5	V
IO	Output current (DC)				100	mA
ICM	Peak collector current				100	mA
Ptot	Total power dissipation	Tamb 25 C (SOT363 note 1)			200	mW
Ptot	Total power dissipation	Tamb 25 C (SOT666 notes 1 and 2)			200	mW
Tstg	Storage temperature		65		+150	C
Tj	Junction temperature				150	C
Tamb	Operating ambient temperature		65		+150	C
Limiting Values (Per device)
Ptot	Total power dissipation	Tamb 25 C (SOT363 note 1)			300	mW
Ptot	Total power dissipation	Tamb 25 C (SOT666 notes 1 and 2)			300	mW
Characteristics (Tamb = 25 C unless otherwise specified)
Rth j-a	Thermal resistance from junction to ambient	Tamb 25 C (SOT363 note 1)		625		K/W
Rth j-a	Thermal resistance from junction to ambient	Tamb 25 C (SOT666 notes 1 and 2)		625		K/W
Rth j-a	Thermal resistance from junction to ambient	Tamb 25 C (SOT363 note 1)		416		K/W
Rth j-a	Thermal resistance from junction to ambient	Tamb 25 C (SOT666 notes 1 and 2)		416		K/W
Electrical Characteristics (Per transistor)
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0			100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0			1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0; Tj = 150 C			50	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0			100	nA
hFE	DC current gain	VCE = 5 V; IC = 1 mA	200	330
VCEsat	Collector-emitter saturation voltage	IC = 5 mA; IB = 0.25 mA			100	mV
R1	Input resistor		3.3	4.7	6.1	k
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0; f = 1 MHz			2.5	pF

Product Models & Packages

Type Number	Package Name	Marking Code	NPN/PNP Complement	PNP/PNP Complement	Package Type
PEMH7	SOT666	H3	PEMD6	PEMB3	Plastic surface mounted package; 6 leads
PUMH7	SOT363 (SC-88)	H*7	PUMD6	PUMB3	Plastic surface mounted package; 6 leads

Package Dimensions

SOT666

Unit	bp	c	D	E	e1	HE	Lp	w
mm	0.27	0.17	1.7	1.3	1.1	1.7	1.5	0.1

SOT363 (SC-88)

Unit	A1	bp	c	D	E	e1	HE	Lp	Q	v	w
mm	0.1	0.30	0.20	2.2	1.35	0.65	2.2	1.15	0.45	0.2	0.15

2409301633_Nexperia-PUMH7-115_C503434.pdf

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Resistor equipped transistor Nexperia PUMH7 115 ideal for low current digital and control applications