Nexperia PUMH4 115 NPN transistor featuring integrated bias resistor for low current output and digital
Nexperia PEMH4; PUMH4 NPN/NPN Resistor-Equipped Transistors
Product Overview
The Nexperia PEMH4 and PUMH4 are NPN/NPN resistor-equipped transistors designed for simplified circuit design and reduced component count. Featuring built-in bias resistors (R1 = 10 k, R2 = open), these transistors are ideal for low current peripheral driving, replacing general-purpose transistors in digital applications, and controlling IC inputs. Their integrated resistors contribute to reduced pick-and-place costs.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Type: NPN/NPN resistor-equipped transistors
- Bias Resistor R1: 10 k
- Bias Resistor R2: Open
Technical Specifications
| Model | Package | Marking Code | NPN/PNP Complement | PNP/PNP Complement |
|---|---|---|---|---|
| PEMH4 | SOT666 | H4 | PEMD4 | PEMB4 |
| PUMH4 | SOT363 (SC-88) | H*4 | PUMD4 | PUMB4 |
Quick Reference Data
| Symbol | Parameter | Typ. | Max. | Unit |
|---|---|---|---|---|
| VCEO | Collector-emitter voltage | 50 | V | |
| IO | Output current (DC) | 100 | mA | |
| R1 | Bias resistor | 10 | k | |
| R2 | Bias resistor | open |
Limiting Values
| Symbol | Parameter | Conditions | Min. | Max. | Unit | |
|---|---|---|---|---|---|---|
| Per transistor | VCBO | Collector-base voltage; open emitter | 50 | V | ||
| VCEO | Collector-emitter voltage; open base | 50 | V | |||
| VEBO | Emitter-base voltage; open collector | 5 | V | |||
| IO | Output current (DC) | 100 | mA | |||
| ICM | Peak collector current | 100 | mA | |||
| Ptot | Total power dissipation | Tamb 25 C; SOT363 note 1 | 200 | mW | ||
| Tamb 25 C; SOT666 notes 1 and 2 | 200 | mW | ||||
| Tstg | Storage temperature | -65 | +150 | C | ||
| Tj | Junction temperature | 150 | C | |||
| Tamb | Operating ambient temperature | -65 | +150 | C | ||
| Per device | Ptot | Total power dissipation | Tamb 25 C; SOT363 note 1 | 300 | mW | |
| Tamb 25 C; SOT666 notes 1 and 2 | 300 | mW |
Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Per transistor | ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 | 100 | nA | ||
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 | 1 | A | |||
| VCE = 30 V; IB = 0; Tj = 150 C | 50 | A | |||||
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 | 100 | nA | |||
| hFE | DC current gain | VCE = 5 V; IC = 1 mA | 200 | ||||
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | 150 | mV | |||
| R1 | Input resistor | 7 | 10 | 13 | k | ||
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0; f = 1 MHz | 2.5 | pF |
Ordering Information
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PEMH4 | SOT666 | Plastic surface mounted package; 6 leads | |
| PUMH4 | SOT363 | Plastic surface mounted package; 6 leads |
Note: Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method.
2410121943_Nexperia-PUMH4-115_C455002.pdf
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