Nexperia PUMH4 115 NPN transistor featuring integrated bias resistor for low current output and digital

Key Attributes
Model Number: PUMH4,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
13kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH4,115
Package:
TSSOP-6(SOT-363)
Product Description

Nexperia PEMH4; PUMH4 NPN/NPN Resistor-Equipped Transistors

Product Overview

The Nexperia PEMH4 and PUMH4 are NPN/NPN resistor-equipped transistors designed for simplified circuit design and reduced component count. Featuring built-in bias resistors (R1 = 10 k, R2 = open), these transistors are ideal for low current peripheral driving, replacing general-purpose transistors in digital applications, and controlling IC inputs. Their integrated resistors contribute to reduced pick-and-place costs.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN/NPN resistor-equipped transistors
  • Bias Resistor R1: 10 k
  • Bias Resistor R2: Open

Technical Specifications

Model Package Marking Code NPN/PNP Complement PNP/PNP Complement
PEMH4 SOT666 H4 PEMD4 PEMB4
PUMH4 SOT363 (SC-88) H*4 PUMD4 PUMB4

Quick Reference Data

Symbol Parameter Typ. Max. Unit
VCEO Collector-emitter voltage 50 V
IO Output current (DC) 100 mA
R1 Bias resistor 10 k
R2 Bias resistor open

Limiting Values

Symbol Parameter Conditions Min. Max. Unit
Per transistor VCBO Collector-base voltage; open emitter 50 V
VCEO Collector-emitter voltage; open base 50 V
VEBO Emitter-base voltage; open collector 5 V
IO Output current (DC) 100 mA
ICM Peak collector current 100 mA
Ptot Total power dissipation Tamb 25 C; SOT363 note 1 200 mW
Tamb 25 C; SOT666 notes 1 and 2 200 mW
Tstg Storage temperature -65 +150 C
Tj Junction temperature 150 C
Tamb Operating ambient temperature -65 +150 C
Per device Ptot Total power dissipation Tamb 25 C; SOT363 note 1 300 mW
Tamb 25 C; SOT666 notes 1 and 2 300 mW

Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
Per transistor ICBO Collector-base cut-off current VCB = 50 V; IE = 0 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 1 A
VCE = 30 V; IB = 0; Tj = 150 C 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 200
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA 150 mV
R1 Input resistor 7 10 13 k
Cc Collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz 2.5 pF

Ordering Information

Type Number Package Name Description Version
PEMH4 SOT666 Plastic surface mounted package; 6 leads
PUMH4 SOT363 Plastic surface mounted package; 6 leads

Note: Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method.


2410121943_Nexperia-PUMH4-115_C455002.pdf

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