N Channel Power MOSFET Minos MDT13N10D with 100V Drain Source Voltage and 13A Continuous Current
Key Attributes
Model Number:
MDT13N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+175℃
RDS(on):
120mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MDT13N10D
Package:
TO-252
Product Description
Product Overview
The MDT13N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 100V, ID of 13A, RDS(ON) < 120m @ VGS=10V, high-density cell design, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Package: TO-252
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | (TA=25) | 13 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | 40 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 31 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 21 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Resistance,Junction-to-Case | RJC | 4.8 | /W | |||
| Electrical Characteristics (TA=25unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A (Note 3) | - | 110 | 120 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 34 | - | nS | |
| Turn-Off Fall Time | tf | - | 9 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2410122012_Minos-MDT13N10D_C17701852.pdf
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