Silicon N Channel Power MOSFET Minos MP9N20 Optimized for SMPS and High Speed Switching Applications
Key Attributes
Model Number:
MP9N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
6A
RDS(on):
320mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.6pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
MP9N20
Package:
TO-220
Product Description
Product Description
The MP9N20 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | Min. | Typ. | Max. |
| Absolute Ratings | VDSS | 200 | V | ||||
| ID | 9 | A | TC = 25C | ||||
| ID | 5.5 | A | TC = 100C | ||||
| IDM | 36 | A | Pulsed Drain Current(Note1) | ||||
| VGS | 30 | V | |||||
| EAS | 200 | mJ | Single Pulse Avalanche Energy(Note2) | ||||
| Power Dissipation | PD | 75 | W | TO-220, TO-251, TO-252 | |||
| PD | 30 | W | TO-220F | ||||
| Derating Factor | 0.6 / 0.24 | W/ | above 25C | ||||
| Temperature Range | TJ, Tstg | -55 to 150 | Operating Junction and Storage | ||||
| OFF Characteristics | VDSS | 200 | V | VGS=0V, ID=250A | |||
| IDSS | 1 | A | VDS =200V, VGS= 0V, Tj = 25 | 1 | |||
| IDSS | 100 | A | VDS=160V, VGS= 0V, Tj = 125 | 100 | |||
| ON Characteristics | RDS(ON) | 0.32 | VGS=10V, ID=4A(Note4) | 0.27 | 0.32 | ||
| VGS(TH) | 4.0 | V | VDS = VGS, ID = 250A(Note4) | 2.0 | 4.0 | ||
| Dynamic Characteristics | Ciss | 550 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | |||
| Coss | 90 | PF | |||||
| Crss | 8.6 | PF | |||||
| Switching Characteristics | td(ON) | 10 | ns | ID =9A, VDD = 100V, VGS = 10V, RG =5 | 10 | ||
| tr | 5 | ns | 5 | ||||
| td(OFF) | 20 | ns | 20 | ||||
| tf | 7 | ns | 7 | ||||
| Source-Drain Diode | IS | 9 | A | Continuous Source Current (Body Diode), TC=25 C | 9 | ||
| ISM | 36 | A | Maximum Pulsed Current (Body Diode) | 36 | |||
| VSD | 1.2 | V | IS=9A, VGS=0V(Note4) | 1.2 | |||
| Diode Characteristics | Trr | 110 | ns | IS=9A, Tj = 25C, dIF/dt=100A/us, VGS=0V | 110 | ||
| Qrr | 465 | nC | 465 |
2410122024_Minos-MP9N20_C2980293.pdf
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