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quality General Purpose PNP Darlington Transistor Minos TIP147T with High Current Gain in TO220 Package factory
quality General Purpose PNP Darlington Transistor Minos TIP147T with High Current Gain in TO220 Package factory

General Purpose PNP Darlington Transistor Minos TIP147T with High Current Gain in TO220 Package

Key Attributes
Model Number: TIP147T
Product Custom Attributes
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
70W
DC Current Gain:
1000
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
TIP147T
Package:
TO-220
Product Description

Product Overview

This PNP Darlington transistor is designed for general-purpose applications. It offers high current gain and is suitable for various electronic circuits requiring amplification or switching. The device is packaged in a TO-220 form factor.

Product Attributes

  • Brand: MNS (Shenzhen Minos)
  • Origin: China (Shenzhen)
  • Package Type: TO-220

Technical Specifications

Parameter Symbol Description Min Typical Max Unit Test Conditions
Absolute Maximum Ratings (Ta=25)
Storage Temperature Tstg -55 150
Junction Temperature Tj 150
Collector Power Dissipation PC (Tc=25) 70 W
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -8 A
Base Current IB -0.5 A
Electrical Characteristics (Ta=25)
Collector-Emitter Sustaining Voltage VCEO(SUS) -100 V IC=-30mA, IB=0
Collector-Emitter Cutoff Current ICEO -2 mA VCE=-50V, IB=0
Collector-Base Cutoff Current ICBO -1 mA VCB=-100V, IE=0
Emitter-Base Cutoff Current IEBO -2 mA VEB=-5V,IC=0
DC Current Gain HFE(1) 1000 VCE=-4V, IC=-0.5A
DC Current Gain HFE(2) 1000 VCE=-4V, IC=-3A
Collector-Emitter Saturation Voltage VCE(sat) -2 V IC=-5A,IB=-10mA
Collector-Emitter Saturation Voltage VCE(sat) -3 V IC=-10A,IB=-40mA
Base-Emitter Saturation Voltage VBE(sat) -3.5 V IC=-10A,IB=-40mA
Base-Emitter On Voltage VBE(on) -3 V VCE=-4V, IC=-10A
Delay Time tD 0.15 S Vcc=-30V,IC=-5A, IB=-20mAIB1= IB2
Rise Time tR 0.55 S Vcc=-30V,IC=-5A, IB=-20mAIB1= IB2
Storage Time tS 2.5 S Vcc=-30V,IC=-5A, IB=-20mAIB1= IB2
Fall Time tF 2.5 S Vcc=-30V,IC=-5A, IB=-20mAIB1= IB2
Pin Configuration (TO-220)
Pin 1 Base (B)
Pin 2 Collector (C)
Pin 3 Emitter (E)

Notes:

  • Exceeding the maximum ratings may cause permanent damage and affect device dependability. Design circuits to stay within absolute maximum ratings.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • This device is sensitive to static electricity; protect it from static discharge.
  • Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

Contact Information:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777


2411120955_Minos-TIP147T_C6719393.pdf

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