Silicon N Channel MOSFET Minos MPF7N65 with Fast Switching Speed and Low Gate Charge Characteristics
Key Attributes
Model Number:
MPF7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.35Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
891pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
MPF7N65
Package:
TO-220F
Product Description
Product Overview
The MPF7N65 is a Silicon N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It offers fast switching and improved dv/dt capability, making it suitable for a wide range of applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC).
Product Attributes
- Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit | |
| Electrical Characteristics | VDSS | VGS= 0V | 650 | V | |
| ID | Tc=25 | 7 | A | ||
| IDM | Pulse widthlimitedbymaximumjunctiontemperature | 28 | A | ||
| VGSS | - | ±30 | V | ||
| EAS | L=10mH, VDD= 50V, RG= 25Ω, Starting TJ= 25ºC | 165 | mJ | ||
| IAS | Note1 | 5.76 | A | ||
| EAR | Note1 | 100 | mJ | ||
| PD | TC = 25ºC | 63 / 97 | W | ||
| Static Characteristics | V(BR)DSS | VGS= 0V, ID = 250µA | 650 | V | |
| IDSS | VDS= 650V, VGS= 0V, TJ = 25ºC | -- | 1 | µA | |
| IGSS | VGS= ±30V | -- | ±100 | nA | |
| VGS(th) | VDS= VGS, ID = 250µA | 3.0 | 4.0 | V | |
| RDS(on) | VGS= 10V, ID = 3.5A, Pulse Test: Pulsewidth≤300µs, Duty Cycle≤1% | -- | 1.1 | 1.35 | Ω |
| Dynamic Characteristics | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 891 | pF |
| Coss | -- | 87 | pF | ||
| Crss | -- | 10 | pF | ||
| Qg | VDD = 520V, ID= 7A, VGS = 10V | -- | 32 | nC | |
| Switching Characteristics | td(on) | VDD= 325V, ID = 7A, RG = 25 Ω | -- | 39 | ns |
| tr | -- | 23 | ns | ||
| td(off) | -- | 137 | ns | ||
| tf | -- | 60 | ns | ||
| Body Diode Characteristics | IS | TC = 25 ºC | -- | 7.0 | A |
| ISM | -- | 28 | A | ||
| VSD | TJ = 25ºC, ISD = 3.5A, VGS= 0V | -- | 1.4 | V | |
| Thermal Resistance | RthJC | TO-220F | 1.98 / 1.29 | K/W | |
| RthJA | TO-220F | 62.5 / 60 | K/W |
2410010300_Minos-MPF7N65_C2980271.pdf
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