Power MOSFET Minos IRFB4227 Silicon N Channel Device Designed for Power Switching and Load Control
Key Attributes
Model Number:
IRFB4227
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-
RDS(on):
20mΩ@10V,46A
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
165pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.2nF@25V
Pd - Power Dissipation:
150W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
IRFB4227
Package:
TO-220EW
Product Description
Product Overview
The IRFB4227 is a Silicon N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON). It is suitable for a wide range of power switching and load switch applications.
Product Attributes
- Brand: SHENZHEN MINOS TECHNOLOGY CO.,LTD
- Origin: China
- Model: IRFB4227
- Package: TO-220EW
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDS | Drain-to-Source Breakdown Voltage | 200 | 220 | V | ||
| ID | Drain Current (continuous) | at Tc=25 | 65 | A | ||
| IDM | Drain Current (pulsed) | 300 | A | |||
| VGS | Gate to Source Voltage | +/-20 | V | |||
| Ptot | Total Dissipation | at Tc=25 | 150 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Eas | Single Pulse Avalanche Energy | 256 | mj | |||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=46A | 20 | 25 | m | |
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=4.5V, ID=46A | 25 | 30 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 3.0 | 3.9 | 5.0 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=200V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gated Body Leakage Current | VGS= +20V | 100 | nA | ||
| IGSS(R) | Gated Body Leakage Current | VGS= -20V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 2200 | pF | ||
| Coss | Output Capacitance | 225 | pF | |||
| Crss | Reverse Transfer Capacitance | 165 | pF | |||
| Qg | Total Gate Charge | VDS=25V ID=46A VGS=10V | 58 | nC | ||
| Qgs | Gate-Source Charge | 6 | nC | |||
| Qgd | Gate-Drain Charge | 15 | nC | |||
| td(on) | Turn-on Delay Time | VDD=25V,ID=46A,RL=0.3 VGS=10V,RG=6.8 | 20 | nS | ||
| tr | Turn-on Rise Time | 90 | nS | |||
| td(off) | Turn-off Delay Time | 45 | nS | |||
| tf | Turn-off Fall Time | 90 | nS | |||
| ISD | S-D Current(Body Diode) | 65 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 300 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=46A | 1.4 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=46A di/dt=100A/us | 102 | nS | ||
| Qrr | Reverse Recovery Charge | 50 | nC | |||
| RJC | Junction-to-Case | 1.3 | /W |
2410121746_Minos-IRFB4227_C6719384.pdf
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