Fast Switching Silicon N channel MOSFET Minos MD100N20 with 200V Drain to Source Voltage and Low RDS
Key Attributes
Model Number:
MD100N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
23mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
57pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
9.65nF@25V
Pd - Power Dissipation:
390W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
MD100N20
Package:
TO-247
Product Description
Product Description
The MD100N20 is a silicon N-channel Enhanced MOSFET, developed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal transistor for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.
General Features
- VDS=200V, ID=100A
- RDS(ON) < 28m @ VGS=10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Application
- High frequency switching mode power supply
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Origin: Shenzhen, China
- Material: Silicon N-channel Enhanced MOSFET
- Certifications: RoHS
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | 200 | V | |||
| ID | Continuous Drain Current @ TC=25C | 100 | A | |||
| ID | Continuous Drain Current @ TC=100C | 50 | A | |||
| IDM | Pulsed Drain Current (Note1) | 320 | A | |||
| VGS | Gate-to-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy (Note2) | 2600 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 5.0 | V/ns | |||
| PD | Power Dissipation @ TO-3PN/TO-247 | 390 | W | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 0.32 | /W | |||
| RJA | Junction-to-Ambient | 40 | /W | |||
| Electrical Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 200 | -- | -- | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA, Reference 25C | -- | 0.25 | -- | V/ |
| IDSS | Drain to Source Leakage Current | VDS =200V, VGS= 0V, Tj = 25 | -- | -- | 1 | A |
| IDSS | Drain to Source Leakage Current | VDS =160V, VGS= 0V, Tj =125 | -- | -- | 10 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | 100 | nA |
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=40A (Note4) | -- | 23 | 28 | m |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID=250A (Note4) | 2.0 | -- | 4.0 | V |
| gfs | Forward Transconductance | VDS=15V, ID=40A (Note4) | -- | 50 | -- | S |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | -- | 0.95 | -- | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHz | -- | 9650 | -- | PF |
| Coss | Output Capacitance | -- | 968 | -- | PF | |
| Crss | Reverse Transfer Capacitance | -- | 57 | -- | PF | |
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =100A, VDD = 100V, VGS = 10V, RG =20 | -- | 60 | -- | ns |
| tr | Rise Time | -- | 250 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 92 | -- | ns | |
| tf | Fall Time | -- | 118 | -- | ns | |
| Qg | Total Gate Charge | ID =100A, VDD =160V, VGS = 10V | -- | 152 | -- | nC |
| Qgs | Gate to Source Charge | -- | 56 | -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 39.5 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) @ TC=25 C | -- | -- | 100 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=100A, VGS=0V (Note4) | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | IS=100A, Tj = 25C, dIF/dt=100A/us, VGS=0V | -- | 192 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 1853 | -- | nC | |
| Irrm | Reverse Recovery Current | -- | 19.3 | -- | A | |
2410122013_Minos-MD100N20_C6719394.pdf
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